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TMS2732A32,768·BITERASABLE PROGRAMMABLE READ·ONLY MEMORY,electrical characteristics over full ranges of recommended operating conditionsPARAMETER TEST CONDITIONS MIN Typt MAX UNITVOH High-level output voltage 10H= -400 p.A 2.4 VVOL Low-level output voltage IOL=2.1 rnA 0.45 VII Input current (leakage) VI=O V to 5.25 V ±10 p.A10 Output current (leakage) VO=O.4 V to 5.25 V ±10 p.AICC1 VCC supply current (standby) E at VIH, G at VIL 20 30 rnAICC2 VCC supply current (active) E and G at VIL 70 125 rnAtTypical values are at T A = 25°C and nominal voltages.capacitance over recommended supply voltage range and operating free-air temperature range, f1 MHzCiPARAMETER TEST CONDITIONS MIN Typt UNITI <strong>Al</strong>l except G/Vpp 4 6Input capacitance I IT VI = 0 V pF/Vpp 20Co Output capacitance Vo = 0 V 12 pFtTypical values are at TA=25°C and nominal voltage.switching characteristics over recommended supply voltage range and operating free-air temperature rangem.":Do3:talA)talE)ten(Gltdis(E):j:tdis(G)+tv(A)PARAMETERAccess time from addressAccess time from EOutput enable time from GOutput disable time from EOutput disable time from GOutput data valid time afterchange of address, E, or G,TEST CONDITIONS(See Note 3)CL=100pF,1 Series 74 TTL Load,t r $20 ns,tf$20 ns,See Figure 1whichever occurs firstcCD< NOTE 3. Timing measurement reference levels: inputs 0.8 V and 2 VC:;" outputs 0.8 V and 2 V.~ tValue calculated from 0.5 V delta to measured output level.recommended conditions for programming, T A = 25°CTMS2732A-30 TMS2732A-35 TMS2732A-45UNITMIN MAX MIN MAX MIN MAX300350 450 ns300350 450 ns150150 150 ns100100 100 ns100100 100 ns00 0 nsVCCVppVIHVILtw(~tsu(A)tsu(D)tsu(VPP)th(A)th(D)th(VPP)trec(PG)tEHDPARAMETERSupply voltageSupply voltageHigh-level input voltageLow-level input voltageE pulse durationAddress setup timeData setup timeVpp setup timeAddress hold timeData hold timeVPP hold timeVPP recovery timeDelay time, data valid after E lowMIN TYP MAX UNIT4.75 5 5.25 V20.5 21 21.5 V2 VCC+1 V-0.1 0.8 V9 55 ms2 p'S2 p'S2 P.s0 p'S2 p'S2 P.s2 P.s1 P.s6-50TEXASINSTRUMENTSPOST OFFICE BOX 225012 • DALLAS. TEXAS 7526511
TMS2732A32,768·BIT ERASABLE PROGRAMMABLE READ·ONLY MEMORYprogramming characteristics. T A = 25 DCVIHVIIVOHVOLIIIppICCtdis(PR)PARAMETERHigh-level input voltageLow-level input voltageHigh-level output voltage (verify)Low-level output voltage (verify)Input current (all inputs)Supply currentSupply currentOutput disable timeTEST CONDITIONS!illi = - 400 p.AIOL =2.1 mAVI = VIL or VIHE=VIL. G = VppMIN TYP MAX UNIT2 VCC+l V-0.1 0.8 V2.4 V0.45 V10 p.A30 mA125 mA0 100 nsPARAMETER MEASUREMENT INFORMATIONOUTPUT ~UNOERTEST~V = 2.09 VRL ~ 780 0T CL = 100pFFIGURE 1 - TYPICAL OUTPUT LOAD CIRCUITenQ)(,).S;Q)C~aa:Q.w4TEXASINsrRUMENlSPOST OFFICE BOX 225012 • DALLAS, TEXAS 752656-51
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SMYOOO2.,MOS MemoryData Book1984II
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ALPHANUMERIC INDEX TO DATA SHEETSSM
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TABLE OF CONTENTSALPHANUMERIC INDEX
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MOSLSIRAMs, ROMs, EPROMsSELECTION G
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If you want to give it a try for yo
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INTERCHANGEABILITY GUIDEPART 1 -ALT
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INTERCHANGEABILITY GUIDEFUJITSUMB 8
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INTERCHANGEABILITY GUIDEMOTOROLAMCM
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INTERCHANGEABILITY GUIDETOSHIBATMM
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INTERCHANGEABILITY GUIDESTATIC RAMS
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Alphanumeric Index, Table of Conten
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GLOSSARY fTIMING CONVENTIONS/DATA S
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GLOSSARY/TIMING CONVENTIONS/DATA SH
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GLOSSARY!TIMING CONVENTIONS/DATA SH
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MOSLSITMS411616,384-811 DYNAMIC RAN
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TMS411616,384·811 DYNAMIC RANDOM·
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1MS411616,384-811 DYNAMIC RANDOM-AC
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TMS411616.384·81T DYNAMIC RANDOM·
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zIiADDRESSES~!.....RASCASwDO"*. i,*
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TMS411616,384-81T DYNAMIC RANDOM-AC
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MOSLSITMS416165,536-81T MULTIPORT M
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TMS416165,536-811 MULTIPORT MEMORYf
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TMS416165,536-BIT MULTIPORT MEMORYs
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TMS416165,536-0IT MULTIPORT MEMORYc
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TMS416165,536·BIT MUL TIPORT MEMOR
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TMS416165,536 o BIT MUL TIPORT MEMO
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TMS416165,536·811 MULTIPORT MEMORY
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zI[~~~co,.. twiRL) _,RAS:::~ SI l L
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TMS416165,536·BIT MULTIPORT MEMORY
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~ ___TMS416165.536-BIT MUL TIPORT M
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0>~a~~i'i_';:;Z~~~d~c:::• s:~lTl~
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TMS416165,536-8IT MULTIPORT MEMORY1
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MOSLSITMS4164, SMJ416465,536-8IT DY
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TMS4164, SMJ416465,536-811. DYNAMIC
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TMS416465,536-811 DYNAMIC RANDOM-AC
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TMS416465,536-811 DYNAMIC RANDOM-AC
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SMJ416465,536-011 DYNAMIC RANDOM-AC
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SMJ416465,536-81T DYNAMIC RANDOM-AC
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SMJ416465,536-011 DYNAMIC RANDOM-AC
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TMS4164, SMJ416465,536·81T DYNAMIC
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TMS4164, SMJ416465,536·8IT DYNAMIC
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z~~gz~.J:>.c1J
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Z~d~~~~0,'...."CIIICCCD:3of. twIRL)
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MOSLSITMS4256. TMS4257262.144·8IT
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TMS4256, TMS4257262,144·8IT DYNAMI
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TMS4256, TMS4257262,144-8IT DYNAMIC
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TMS4257262.144·8IT DYNAMIC RANDOM
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TMS4256, TMS4257262,144·BIT DYNAMI
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TMS4257262,144·81T DYNAMIC RANDOM
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Z~d~~~~.!..JcoNOTE:'CIIICO(1),- twI
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i:Z~d~~z~+:>0Co ......"CCICCCD:3og.
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MOSLSITMS4416. SMJ441616.384·WORD
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TMS4416, SMJ441616,384·WORD BY 4·
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TMS441616,384-WORD BY 4-BI1 DYNAMIC
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TMS441616,384-WORD BY 4-BIT DYNAMIC
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SMJ441616,384·WORD BY 4·BIT DYNAM
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SMJ441616,384-WORD BY 4-B11 DYNAMIC
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1MS4416, SMJ441616,384·WORD BY 4·
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TMS4416, SMJ441616,384·WORD BY 4·
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z~~~z@towRAs-{rCASAO·A7wDQG:::'.!A
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1:'QltC(()3oc..(()C3~~n_:::Z~~~;;;
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MOSLSITMS446465,536-WORD BY 4-BIT D
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TMS446465,536-WORD 8Y 4-81T DYNAMIC
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TMS446465,536·WORD BY 4·BIT DYNAM
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1MS446465,536·WORD BY 4·B11 DYNAM
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TMS446465,536·WORD BY 4·BIT DYNAM
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RASCAS----{! '.,ReIVIH i~VIL I tRLC
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~~~n_;;;z~~. ~~tTlg ;O~d ;;;t::=z~@
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~Z~~iZ~tw '"[:;-~~~~~:TCDCO ".;:r0~
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MEMORY SUPPORTLSITMS4500ADYNAMIC RA
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TMS4500ADYNAMIC RAM CONTROLLERpin d
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TMS4500ADYNAMIC RAM CONTROLLERarbit
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TMS4500ADYNAMIC RAM CONTROLLERswitc
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TMS4500ADYNAMIC RAM CONTROLLERacces
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TMS4500ADYNAMIC RAM CONTROLLERoutpu
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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•••••MOSLSI65,536 X 4 Org
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TM4164EC465,536 BY 4·BIT DYNAMIC R
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MOSLSITM4164EL965,536 BY 9·BIT DYN
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TM4164EL965,536 BY 9-BIT DYNAMIC RA
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••••••••0MOSLSI65,5
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TM4164FL865,536 BY 8·BIT DYNAMIC R
Page 195 and 196: Alphanumeric Index, Table of Conten
Page 197 and 198: MOSLSITMS2516. SMJ251616.384-BIT ER
Page 199 and 200: TMS2516, SMJ251616,384-BIT ERASABLE
Page 201 and 202: TMS251616,384·BIT ERASABLE PROGRAM
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Page 205 and 206: o 441MS2516, SMJ251616,384·B11 ERA
Page 207 and 208: MOSLSITMS2532, SMJ253232,768·BIT E
Page 211 and 212: TMS253232,768-BI1 ERASABLE PROGRAMM
Page 217 and 218: MOSLSITMS2564, SMJ256465,536-BIT ER
Page 221 and 222: TMS256465,536-BIT ERASABLE PROGRAMM
Page 225 and 226: TMS2564 r SMJ256465 r536-BIT ERASAB
Page 227 and 228: MOSLSITMS2708, TMS27L08, SMJ2708, S
Page 229 and 230: TMS270B, TMS27LOBSMJ270B, SMJ27LOB1
Page 231 and 232: TMS2708. TMS27L081024·WORD BY 8·B
Page 233 and 234: SMJ2708, SMJ27L081024·WORD BY 8·B
Page 235 and 236: TMS2708, TMS27L08SMJ2708, SMJ27L081
Page 237 and 238: MOSLSITMS27162048·WORD BY 8·BIT E
Page 239 and 240: TMS27162048·WORD BY 8·BIT ERASABL
Page 241 and 242: TMS27162048-WORD BY 8-BIT ERASABLEP
Page 243 and 244: TMS2732A32,76B-BIT ERASABLE PROGRAM
Page 245: TMS2732A32,768-BIT ERASABLE PROGRAM
Page 249 and 250: MOSLSITMS276465,536-BI1 ERASABLE PR
Page 251 and 252: TMS276465,536·BIT ERASABLE PROGRAM
Page 257 and 258: MOSLSITMS27128131,072·BIT ERASABLE
Page 259 and 260: TMS27128131,072·BI1 ERASABLE PROGR
Page 261 and 262: TMS27128131,072·BIT ERASABLE PROGR
Page 263 and 264: TMS27128131,072·BIT ERASABLE PROGR
Page 265 and 266: Alphanumeric Index, Table of Conten
Page 267 and 268: MOSLSITMS46648192·WORD BY 8·BIT R
Page 269 and 270: TMS46648192·WORD BY 8·BIT READ·O
Page 273 and 274: MOSLSITMS47324096~WORD BY B·BIT RE
Page 279 and 280: MOSLSITMS47648192·WORD BY 8·BIT R
Page 285 and 286: MOSLSI, TMS49648192·WORD BY 8·BIT
Page 293 and 294: MOSLSITMS4712816,384·WORD BY 8·BI
Page 295 and 296: TMS4712816,384·WORD BY 8·BIT READ
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TMS4712816,384-WORD BY 8-BIT READ-O
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TMS4712816,384·WORD BY 8·BIT READ
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MOSLSITMS4725632.768·WORD BY 8·BI
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TMS4725632.768·WORD BY 8·BIT READ
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TMS4725632,768·WORD BY 8·BIT READ
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MOSLSITMS2114, TMS2114L1024·WORD B
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TMS2114, TMS2114L1024·WDRD BY 4·B
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TMS2114. TMS2114L1024·WORD BV 4·B
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ADVANCED MEMORYDEVELOPMENT•Fast A
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TMS2150CACHE ADDRESS COMPARATORabso
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TMS2150CACHE ADDRESS COMPARATORPARA
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MOSLSITMS40162048·WORD BY 8·BIT S
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TMS4016204H-WORD BY H-BIT STATIC RA
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TMS40162048-WDRD BY 8-BIT STATIC RA
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MOSLSITMS4044, TMS40L444096-WORD BY
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TMS4044, TMS40L444096·WORD BY 1·B
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TMS4044, TMS40L444096·WORD BY l·B
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MILITARYCMOSLSISMJ55172048-WORD BY
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SMJ5517204a·WORD BY a·BIT STATIC
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SMJ55172048·WORD BY 8·BIT STATIC
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SMJ55172048-WDRD BY 8-BIT STATIC RA
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SMJ5517204B·WORD BY B·BIT STATIC
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However, the TMS 4164 provides the
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EXPANSION OF 3242 FOR 256-CYCLE REF
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•9-6
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PAD OPENINGIN OVERCOATPADMETALPADME
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Figure 5 shows how the driver outpu
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cpI UO,leWJOJUI suo'le:>!ldd"f\)W(3
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The falling edge of RAS causes R 1
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~--------::~~:~:~~~:--------~~7,34(
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J-Lead AdvantageTexas Instruments P
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Surface Mount Component Availabilit
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fiSECONDARYVAPOR(VAPOR BLANKET)..Fi
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l>'C'2.ri'Q),..o·:::Jen5'....... o
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l>"C'2..(i"Dl...0":=(I)5"....o...3D
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An external refresh counter has bee
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l>'C'CC:)"Q).-+o·::::sen:ro ... ""
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uo!~ew"oJul suo!~ea!ldd"CD .,.., w7
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DOTCLOCKCLOCK ACLOCK C2 xWCLKRAS (A
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B. If dynamic RAM refresh is enable
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•9-38
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The TMS4416/TMS4500A board is arran
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RAS ~CAS \ I2AI \ I '-2BI '-iiD1Ro2
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9-44
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ALEACXRASMAO-MA7CASFIGURE 1 -ALE LE
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The ALE high to ClK low time is giv
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ClKALEACXRASMAO-MA7CASREFREQROY•
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CDinN~1~12 MHzClKINClKOUTWE/iOclKRD
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UO!leWJOJUI SUOlle:ludd"com~'~,i'74
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coen(J)CLOCKWRITEREADROYALEA14-A5MS
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. Access Grant CyclesThe precharge
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whereta(C)tp(BFR)(-103 + tc2 - tp(B
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•9-62
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tt(REH)TCHLLtAEL-RELRAS rise time (
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. Refresh CyclesOn refresh cycles t
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wherethus,fCLKfCLKtCACfCLK[1/2 (tCA
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R/W approach does a normal read-mod
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II(0~""6 MHzI UO!leWJO,ulSUo!le:l!l
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ClKAlE.ACR\ ,----\,\ ,----R/W\ ,---
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4. Row address setup and hold timeT
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CLKrWRITE -------I.~ ..~---REFRESH-
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The read access time on access gran
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implementations in order to relieve
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"C'2..c:rm...o·j(I)....5'o3...mo·
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RELATIVE MEMORY SIZEARCHIVAL STORAG
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increments till satisfied. This pro
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In the example shown in Figure 5, t
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»'C"E..crQ)r+0':::Jtil:;-....o...3
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•9-94
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184LOGIC SYMBOLS1. INTRODUCTIONEXPl
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LOGIC SYMBOLS4.DIAGRAMATIC SUMMARYI
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lOGIC SYMBOLSWhen RAS goes low, it
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MECHANICAL DATAgeneralElectrical ch
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MECHANICAL DATAceramic packages -ce
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MECHANICAL DATAplastic packages (N
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MECHANICAL DATAceramic chip carrier
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Texas InstrumentsSemiconductor Tech
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TI Sales Offices TI DistributorsALA
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Printed in U.S.A.•TEXASINSTRUMENT
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