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TMS4500ADYNAMIC RAM CONTROLLERready timing (ACX during ClK high) (see notes 10 thru 13)ClKALEROY~ ~---_----I'\ !~ r--tACl-Cl--l'AEL_~ -t 'ACL-RYH"\ 1-----C'
TMS4500ADYNAMIC RAM CONTROLLERoutput tristate timingOUTPUTSrefresh cycle timing(three cycle)refresh cycle timing(four cycle)\;-'CAV-CEL(I)(1)(,)'S;(1)c......0C.C.:len... >0E(1).~'t:JCCO~«a:(,)'ECOc>C~lMAVARl~t On the access grant cycle following refresh, the occurrence of CAS low depends on the relative occurrence of ALE low to ACX low. If ACX occurs priorto or coincident with ALE then CAS and address mUltiplexing are timed from the ClK high transition with tREl-MAX delay from RAs low to address notvalid. If ACX occurs 20 ns or more after ALE, then CAS and address multiplexing are timed from the ClK low transition.84TEXAS INSTRUMENTS4-135INCORPORATED
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SMYOOO2.,MOS MemoryData Book1984II
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ALPHANUMERIC INDEX TO DATA SHEETSSM
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TABLE OF CONTENTSALPHANUMERIC INDEX
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MOSLSIRAMs, ROMs, EPROMsSELECTION G
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If you want to give it a try for yo
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INTERCHANGEABILITY GUIDEPART 1 -ALT
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INTERCHANGEABILITY GUIDEFUJITSUMB 8
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INTERCHANGEABILITY GUIDEMOTOROLAMCM
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INTERCHANGEABILITY GUIDETOSHIBATMM
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INTERCHANGEABILITY GUIDESTATIC RAMS
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Alphanumeric Index, Table of Conten
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GLOSSARY fTIMING CONVENTIONS/DATA S
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GLOSSARY/TIMING CONVENTIONS/DATA SH
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GLOSSARY!TIMING CONVENTIONS/DATA SH
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MOSLSITMS411616,384-811 DYNAMIC RAN
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TMS411616,384·811 DYNAMIC RANDOM·
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1MS411616,384-811 DYNAMIC RANDOM-AC
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TMS411616.384·81T DYNAMIC RANDOM·
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zIiADDRESSES~!.....RASCASwDO"*. i,*
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TMS411616,384-81T DYNAMIC RANDOM-AC
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MOSLSITMS416165,536-81T MULTIPORT M
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TMS416165,536-811 MULTIPORT MEMORYf
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TMS416165,536-BIT MULTIPORT MEMORYs
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TMS416165,536-0IT MULTIPORT MEMORYc
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TMS416165,536·BIT MUL TIPORT MEMOR
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TMS416165,536 o BIT MUL TIPORT MEMO
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TMS416165,536·811 MULTIPORT MEMORY
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zI[~~~co,.. twiRL) _,RAS:::~ SI l L
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TMS416165,536·BIT MULTIPORT MEMORY
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~ ___TMS416165.536-BIT MUL TIPORT M
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0>~a~~i'i_';:;Z~~~d~c:::• s:~lTl~
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TMS416165,536-8IT MULTIPORT MEMORY1
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MOSLSITMS4164, SMJ416465,536-8IT DY
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TMS4164, SMJ416465,536-811. DYNAMIC
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TMS416465,536-811 DYNAMIC RANDOM-AC
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TMS416465,536-811 DYNAMIC RANDOM-AC
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SMJ416465,536-011 DYNAMIC RANDOM-AC
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SMJ416465,536-81T DYNAMIC RANDOM-AC
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SMJ416465,536-011 DYNAMIC RANDOM-AC
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TMS4164, SMJ416465,536·81T DYNAMIC
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TMS4164, SMJ416465,536·8IT DYNAMIC
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z~~gz~.J:>.c1J
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Z~d~~~~0,'...."CIIICCCD:3of. twIRL)
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MOSLSITMS4256. TMS4257262.144·8IT
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TMS4256, TMS4257262,144·8IT DYNAMI
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TMS4256, TMS4257262,144-8IT DYNAMIC
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TMS4257262.144·8IT DYNAMIC RANDOM
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TMS4256, TMS4257262,144·BIT DYNAMI
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TMS4257262,144·81T DYNAMIC RANDOM
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Z~d~~~~.!..JcoNOTE:'CIIICO(1),- twI
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i:Z~d~~z~+:>0Co ......"CCICCCD:3og.
Page 123 and 124: TMS4256, TMS4257262,144·8IT DYNAMI
Page 125 and 126: MOSLSITMS4416. SMJ441616.384·WORD
Page 127 and 128: TMS4416, SMJ441616,384·WORD BY 4·
Page 129 and 130: TMS441616,384-WORD BY 4-BI1 DYNAMIC
Page 131 and 132: TMS441616,384-WORD BY 4-BIT DYNAMIC
Page 135 and 136: SMJ441616,384·WORD BY 4·BIT DYNAM
Page 137 and 138: SMJ441616,384-WORD BY 4-B11 DYNAMIC
Page 139 and 140: 1MS4416, SMJ441616,384·WORD BY 4·
Page 141 and 142: TMS4416, SMJ441616,384·WORD BY 4·
Page 143 and 144: z~~~z@towRAs-{rCASAO·A7wDQG:::'.!A
Page 145 and 146: 1:'QltC(()3oc..(()C3~~n_:::Z~~~;;;
Page 147 and 148: MOSLSITMS446465,536-WORD BY 4-BIT D
Page 149 and 150: TMS446465,536-WORD 8Y 4-81T DYNAMIC
Page 151 and 152: TMS446465,536·WORD BY 4·BIT DYNAM
Page 153 and 154: 1MS446465,536·WORD BY 4·B11 DYNAM
Page 155 and 156: TMS446465,536·WORD BY 4·BIT DYNAM
Page 159 and 160: RASCAS----{! '.,ReIVIH i~VIL I tRLC
Page 161 and 162: ~~~n_;;;z~~. ~~tTlg ;O~d ;;;t::=z~@
Page 163 and 164: ~Z~~iZ~tw '"[:;-~~~~~:TCDCO ".;:r0~
Page 165 and 166: MEMORY SUPPORTLSITMS4500ADYNAMIC RA
Page 167 and 168: TMS4500ADYNAMIC RAM CONTROLLERpin d
Page 169 and 170: TMS4500ADYNAMIC RAM CONTROLLERarbit
Page 171 and 172: TMS4500ADYNAMIC RAM CONTROLLERswitc
Page 173: TMS4500ADYNAMIC RAM CONTROLLERacces
Page 177 and 178: TMS4500ADYNAMIC RAM CONTROLLERtypic
Page 179 and 180: TMS4500ADYNAMIC RAM CONTROLLERtypic
Page 181 and 182: Alphanumeric Index, Table of Conten
Page 183 and 184: •••••MOSLSI65,536 X 4 Org
Page 185 and 186: TM4164EC465,536 BY 4·BIT DYNAMIC R
Page 187 and 188: MOSLSITM4164EL965,536 BY 9·BIT DYN
Page 189 and 190: TM4164EL965,536 BY 9-BIT DYNAMIC RA
Page 191 and 192: ••••••••0MOSLSI65,5
Page 193 and 194: TM4164FL865,536 BY 8·BIT DYNAMIC R
Page 195 and 196: Alphanumeric Index, Table of Conten
Page 197 and 198: MOSLSITMS2516. SMJ251616.384-BIT ER
Page 199 and 200: TMS2516, SMJ251616,384-BIT ERASABLE
Page 201 and 202: TMS251616,384·BIT ERASABLE PROGRAM
Page 203 and 204: SMJ251616,384-BIT ERASABLE PROGRAMM
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Page 207 and 208: MOSLSITMS2532, SMJ253232,768·BIT E
Page 211 and 212: TMS253232,768-BI1 ERASABLE PROGRAMM
Page 217 and 218: MOSLSITMS2564, SMJ256465,536-BIT ER
Page 221 and 222: TMS256465,536-BIT ERASABLE PROGRAMM
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TMS2564 r SMJ256465 r536-BIT ERASAB
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MOSLSITMS2708, TMS27L08, SMJ2708, S
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TMS270B, TMS27LOBSMJ270B, SMJ27LOB1
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TMS2708. TMS27L081024·WORD BY 8·B
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SMJ2708, SMJ27L081024·WORD BY 8·B
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TMS2708, TMS27L08SMJ2708, SMJ27L081
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MOSLSITMS27162048·WORD BY 8·BIT E
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TMS27162048·WORD BY 8·BIT ERASABL
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TMS27162048-WORD BY 8-BIT ERASABLEP
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TMS2732A32,76B-BIT ERASABLE PROGRAM
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TMS2732A32,768-BIT ERASABLE PROGRAM
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TMS2732A32,768·BIT ERASABLE PROGRA
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MOSLSITMS276465,536-BI1 ERASABLE PR
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TMS276465,536·BIT ERASABLE PROGRAM
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TMS276465,536-BIT ERASABLE PROGRAMM
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TMS276465,536-BIT ERASABLE PROGRAMM
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MOSLSITMS27128131,072·BIT ERASABLE
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TMS27128131,072·BI1 ERASABLE PROGR
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TMS27128131,072·BIT ERASABLE PROGR
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TMS27128131,072·BIT ERASABLE PROGR
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MOSLSITMS46648192·WORD BY 8·BIT R
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TMS46648192·WORD BY 8·BIT READ·O
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MOSLSITMS47324096~WORD BY B·BIT RE
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MOSLSITMS47648192·WORD BY 8·BIT R
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MOSLSI, TMS49648192·WORD BY 8·BIT
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MOSLSITMS4712816,384·WORD BY 8·BI
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TMS4712816,384·WORD BY 8·BIT READ
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TMS4712816,384-WORD BY 8-BIT READ-O
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MOSLSITMS4725632.768·WORD BY 8·BI
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TMS4725632.768·WORD BY 8·BIT READ
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MOSLSITMS2114, TMS2114L1024·WORD B
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TMS2114, TMS2114L1024·WDRD BY 4·B
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TMS2114. TMS2114L1024·WORD BV 4·B
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ADVANCED MEMORYDEVELOPMENT•Fast A
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TMS2150CACHE ADDRESS COMPARATORabso
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TMS2150CACHE ADDRESS COMPARATORPARA
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MOSLSITMS40162048·WORD BY 8·BIT S
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TMS4016204H-WORD BY H-BIT STATIC RA
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TMS40162048-WDRD BY 8-BIT STATIC RA
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MOSLSITMS4044, TMS40L444096-WORD BY
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TMS4044, TMS40L444096·WORD BY 1·B
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TMS4044, TMS40L444096·WORD BY l·B
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MILITARYCMOSLSISMJ55172048-WORD BY
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SMJ5517204a·WORD BY a·BIT STATIC
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SMJ55172048·WORD BY 8·BIT STATIC
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SMJ55172048-WDRD BY 8-BIT STATIC RA
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SMJ5517204B·WORD BY B·BIT STATIC
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However, the TMS 4164 provides the
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EXPANSION OF 3242 FOR 256-CYCLE REF
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•9-6
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PAD OPENINGIN OVERCOATPADMETALPADME
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Figure 5 shows how the driver outpu
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cpI UO,leWJOJUI suo'le:>!ldd"f\)W(3
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The falling edge of RAS causes R 1
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~--------::~~:~:~~~:--------~~7,34(
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J-Lead AdvantageTexas Instruments P
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Surface Mount Component Availabilit
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fiSECONDARYVAPOR(VAPOR BLANKET)..Fi
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l>'C'2.ri'Q),..o·:::Jen5'....... o
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l>"C'2..(i"Dl...0":=(I)5"....o...3D
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An external refresh counter has bee
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l>'C'CC:)"Q).-+o·::::sen:ro ... ""
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uo!~ew"oJul suo!~ea!ldd"CD .,.., w7
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DOTCLOCKCLOCK ACLOCK C2 xWCLKRAS (A
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B. If dynamic RAM refresh is enable
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•9-38
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The TMS4416/TMS4500A board is arran
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RAS ~CAS \ I2AI \ I '-2BI '-iiD1Ro2
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9-44
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ALEACXRASMAO-MA7CASFIGURE 1 -ALE LE
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The ALE high to ClK low time is giv
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ClKALEACXRASMAO-MA7CASREFREQROY•
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CDinN~1~12 MHzClKINClKOUTWE/iOclKRD
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UO!leWJOJUI SUOlle:ludd"com~'~,i'74
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coen(J)CLOCKWRITEREADROYALEA14-A5MS
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. Access Grant CyclesThe precharge
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whereta(C)tp(BFR)(-103 + tc2 - tp(B
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•9-62
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tt(REH)TCHLLtAEL-RELRAS rise time (
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. Refresh CyclesOn refresh cycles t
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wherethus,fCLKfCLKtCACfCLK[1/2 (tCA
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R/W approach does a normal read-mod
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II(0~""6 MHzI UO!leWJO,ulSUo!le:l!l
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ClKAlE.ACR\ ,----\,\ ,----R/W\ ,---
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4. Row address setup and hold timeT
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CLKrWRITE -------I.~ ..~---REFRESH-
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The read access time on access gran
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implementations in order to relieve
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"C'2..c:rm...o·j(I)....5'o3...mo·
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RELATIVE MEMORY SIZEARCHIVAL STORAG
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increments till satisfied. This pro
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In the example shown in Figure 5, t
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»'C"E..crQ)r+0':::Jtil:;-....o...3
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•9-94
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184LOGIC SYMBOLS1. INTRODUCTIONEXPl
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LOGIC SYMBOLS4.DIAGRAMATIC SUMMARYI
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lOGIC SYMBOLSWhen RAS goes low, it
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MECHANICAL DATAgeneralElectrical ch
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MECHANICAL DATAceramic packages -ce
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MECHANICAL DATAplastic packages (N
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MECHANICAL DATAceramic chip carrier
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Texas InstrumentsSemiconductor Tech
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TI Sales Offices TI DistributorsALA
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Printed in U.S.A.•TEXASINSTRUMENT
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