1 - Al Kossow's Bitsavers

MOSLSITMS446465,536-WORD BY 4-BIT DYNAMIC RAMNOVEMBER 19B3 - REVISED JANUARY 1984• 65,536 X 4 Organization• Single +5-V Supply (10% Tolerance)• JEDEC Standardized Pin-Out• Pin-Out Identical to TMS4416(16K X 4 Dynamic RAM)• Performance Ranges:DEVICEACCESSTIMEROWADDRESS(MAX)ACCESSTIMECOLUMNADDRESS(MAX)READORWRITECYCLE(MIN)READ-MODIFY-WRITECYCLE(MIN)TMS4464 ... JL OR NL PACKAGE(TOP VIEW)GDOlVSSDQ4CASDQ3ADAlA2A3A7TMS4464-10TMS4464-12TMS4464-15TMS4464-20100 ns120 ns150 ns200 ns60 ns70 ns85 ns12d ns200 ns230 ns260 ns330 ns270 ns310 ns345 ns435 ns• Long Refresh Period ... 4 ms (MAX)• Low Refresh Overhead Time ... As Low As 1.3% of TotalRefresh Period• On-Chip Substrate Bias Generator• All Inputs, Outputs, and Clocks Fully TTL Compatible• 3-State Unlatched Output• Early Write or G to Control Output Buffer Impedance• Page-Mode Operation for Faster Access• Power Dissipation As Low As:Operating ... 250 mW (TVP)Standby ... 12.5 mW (TVP)• RAS-Only Refresh Mode• Hidden Refresh Mode• CAS-Before-RAS Refresh Mode (Optional)descriptionPIN NOMENCLATUREAO·A7Address InputsCASColumn Address StrobeD01·D04 Data·ln/Data·OutGOutput EnableRASRow Address StrobeVDD+5-V SupplyVSSGroundINWrite EnableThe TMS4464 is a high-speed, 262, 144-bit dynamic random-access memory, organized as 65,536 words of fourbits each. It employs state-of-the-art SMOS (scaled MOS) N-channel double-level polysilicon gate technology for veryhigh performance combined with low cost and improved reliability.rnQ)Co)·SQ)c....o0.0.::::1(J)...>-oEQ)~"Ct:ca::?E