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SMJ441616,384·WDRD BY 4·B11 DYNAMIC RAMrecommended operating conditionsSMJ4416PARAMETER S VERSION EVERSION UNITMIN NOM MAX MIN NOM MAXSupply voltage, VOO 4.5 5 5.5 4.5 5 5.5 VSupply voltage, VSS 0 0 VHigh-level input voltage, VIHI VOO = 4.5 V 2.4 4.8 2.4 4.8I VOO = 5.5 V 2.4 5.8 2.4 5.8Low-level input voltage, VIL (see Note 2) VIK 0.8 VIK 0.8 VOperating case temperature, TC -55 100 -40 85 °cVNOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum. is used in this data sheet for logic voltage levels only.electrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)o'
SMJ441616,384·WORD BY 4·BIT DYNAMIC RAMelectrical characteristics over full ranges of recommended operating conditions (unless otherwise noted)VIKPARAMETERInput clamp voltageTEST CONDITIONS11= -15 mA,see Figure 1VOH High-level output voltage 10H = -2mAVOL Low-level output voltage 10L = 4.2 mAVI = 0 V to 5.8 V,II Input current (leakage) VOO = 5 V,A" other pins = 0 V10 Output current (leakage)1001Average operating currentduring read or write cycle1002* Standby currentVa = 0.4 V to 5.5 V,VDO = 5 V, CAS highAt tc = minimum cycleAfter 1 memory cycle,RAS and CAS hightc = minimum cycle,1003 Average refresh current RAS cycling,CAS hightc(P) = minimum cycle,Average page-mode1004 RAS low,currentCAS cyclingt A" typical values are at TC = 25 DC and nominal supply voltages.*VIL ~ -0.6 V on a" inputs.SMJ4416-15 SMJ4416-20MIN Typt MAX MIN Typt MAXUNIT-1.2 -1.2 V2.4 2.4 V0.4 0.4 V±10 ±10 p.A±10 ±10 p.A40 48 35 42 mA3.5 5 3.5 5 mA25 40 21 34 mA25 40 21 34 mAcapacitance over recommended supply voltage range and operating case temperature range, f = 1 MHzPARAMETERSMJ4416TypT MAXCi(A) Input capacitance, address inputs 5 7 pFCi(RC) Input capacitance, strobe inputs 8 10 pFCi(W) Input capacitance, write enable input 8 10 pFCito Input/output capacitance, data ports 8 10 pFt A" typical values are at T C = 25 DC and nominal supply voltages.UNITenQ)(,).:;;Q)C...oc.C.:::Jen>-...oEQ)~"'CI:CO~CTEXASINSTRUMENTSPOST OFFICE BOX 225012 • DALLAS. TEXAS 752654-95
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SMYOOO2.,MOS MemoryData Book1984II
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ALPHANUMERIC INDEX TO DATA SHEETSSM
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TABLE OF CONTENTSALPHANUMERIC INDEX
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MOSLSIRAMs, ROMs, EPROMsSELECTION G
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If you want to give it a try for yo
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INTERCHANGEABILITY GUIDEPART 1 -ALT
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INTERCHANGEABILITY GUIDEFUJITSUMB 8
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INTERCHANGEABILITY GUIDEMOTOROLAMCM
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INTERCHANGEABILITY GUIDETOSHIBATMM
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INTERCHANGEABILITY GUIDESTATIC RAMS
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Alphanumeric Index, Table of Conten
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GLOSSARY fTIMING CONVENTIONS/DATA S
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GLOSSARY/TIMING CONVENTIONS/DATA SH
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GLOSSARY!TIMING CONVENTIONS/DATA SH
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MOSLSITMS411616,384-811 DYNAMIC RAN
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TMS411616,384·811 DYNAMIC RANDOM·
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1MS411616,384-811 DYNAMIC RANDOM-AC
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TMS411616.384·81T DYNAMIC RANDOM·
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TMS411616,384·811 DYNAMIC RANDOM·
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zIiADDRESSES~!.....RASCASwDO"*. i,*
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TMS411616,384-81T DYNAMIC RANDOM-AC
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MOSLSITMS416165,536-81T MULTIPORT M
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TMS416165,536-811 MULTIPORT MEMORYf
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TMS416165,536-BIT MULTIPORT MEMORYs
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TMS416165,536-0IT MULTIPORT MEMORYc
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TMS416165,536·BIT MUL TIPORT MEMOR
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TMS416165,536 o BIT MUL TIPORT MEMO
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TMS416165,536·811 MULTIPORT MEMORY
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zI[~~~co,.. twiRL) _,RAS:::~ SI l L
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TMS416165,536·BIT MULTIPORT MEMORY
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~ ___TMS416165.536-BIT MUL TIPORT M
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0>~a~~i'i_';:;Z~~~d~c:::• s:~lTl~
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TMS416165,536-8IT MULTIPORT MEMORY1
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MOSLSITMS4164, SMJ416465,536-8IT DY
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TMS4164, SMJ416465,536-811. DYNAMIC
Page 83 and 84: TMS416465,536-811 DYNAMIC RANDOM-AC
Page 85 and 86: TMS416465,536·811 DYNAMIC RANDOM·
Page 87 and 88: TMS416465,536-811 DYNAMIC RANDOM-AC
Page 89 and 90: SMJ416465,536-011 DYNAMIC RANDOM-AC
Page 91 and 92: SMJ416465,536-81T DYNAMIC RANDOM-AC
Page 93 and 94: SMJ416465,536-011 DYNAMIC RANDOM-AC
Page 95 and 96: TMS4164, SMJ416465,536·81T DYNAMIC
Page 97 and 98: TMS4164, SMJ416465,536·8IT DYNAMIC
Page 99 and 100: z~~gz~.J:>.c1J
Page 101 and 102: Z~d~~~~0,'...."CIIICCCD:3of. twIRL)
Page 103 and 104: MOSLSITMS4256. TMS4257262.144·8IT
Page 105 and 106: TMS4256, TMS4257262,144·8IT DYNAMI
Page 107 and 108: TMS4256, TMS4257262,144-8IT DYNAMIC
Page 111 and 112: TMS4257262.144·8IT DYNAMIC RANDOM
Page 113 and 114: TMS4256, TMS4257262,144·BIT DYNAMI
Page 117 and 118: TMS4257262,144·81T DYNAMIC RANDOM
Page 119 and 120: Z~d~~~~.!..JcoNOTE:'CIIICO(1),- twI
Page 121 and 122: i:Z~d~~z~+:>0Co ......"CCICCCD:3og.
Page 125 and 126: MOSLSITMS4416. SMJ441616.384·WORD
Page 127 and 128: TMS4416, SMJ441616,384·WORD BY 4·
Page 129 and 130: TMS441616,384-WORD BY 4-BI1 DYNAMIC
Page 131 and 132: TMS441616,384-WORD BY 4-BIT DYNAMIC
Page 133: TMS441616,384-WORD BY 4-BIT DYNAMIC
Page 137 and 138: SMJ441616,384-WORD BY 4-B11 DYNAMIC
Page 139 and 140: 1MS4416, SMJ441616,384·WORD BY 4·
Page 141 and 142: TMS4416, SMJ441616,384·WORD BY 4·
Page 143 and 144: z~~~z@towRAs-{rCASAO·A7wDQG:::'.!A
Page 145 and 146: 1:'QltC(()3oc..(()C3~~n_:::Z~~~;;;
Page 147 and 148: MOSLSITMS446465,536-WORD BY 4-BIT D
Page 149 and 150: TMS446465,536-WORD 8Y 4-81T DYNAMIC
Page 151 and 152: TMS446465,536·WORD BY 4·BIT DYNAM
Page 153 and 154: 1MS446465,536·WORD BY 4·B11 DYNAM
Page 155 and 156: TMS446465,536·WORD BY 4·BIT DYNAM
Page 157 and 158: TMS446465,536-WORD BY 4-BIT DYNAMIC
Page 159 and 160: RASCAS----{! '.,ReIVIH i~VIL I tRLC
Page 161 and 162: ~~~n_;;;z~~. ~~tTlg ;O~d ;;;t::=z~@
Page 163 and 164: ~Z~~iZ~tw '"[:;-~~~~~:TCDCO ".;:r0~
Page 165 and 166: MEMORY SUPPORTLSITMS4500ADYNAMIC RA
Page 167 and 168: TMS4500ADYNAMIC RAM CONTROLLERpin d
Page 169 and 170: TMS4500ADYNAMIC RAM CONTROLLERarbit
Page 171 and 172: TMS4500ADYNAMIC RAM CONTROLLERswitc
Page 173 and 174: TMS4500ADYNAMIC RAM CONTROLLERacces
Page 175 and 176: TMS4500ADYNAMIC RAM CONTROLLERoutpu
Page 177 and 178: TMS4500ADYNAMIC RAM CONTROLLERtypic
Page 179 and 180: TMS4500ADYNAMIC RAM CONTROLLERtypic
Page 181 and 182: Alphanumeric Index, Table of Conten
Page 183 and 184: •••••MOSLSI65,536 X 4 Org
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TM4164EC465,536 BY 4·BIT DYNAMIC R
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MOSLSITM4164EL965,536 BY 9·BIT DYN
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TM4164EL965,536 BY 9-BIT DYNAMIC RA
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••••••••0MOSLSI65,5
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TM4164FL865,536 BY 8·BIT DYNAMIC R
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MOSLSITMS2516. SMJ251616.384-BIT ER
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TMS2516, SMJ251616,384-BIT ERASABLE
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TMS251616,384·BIT ERASABLE PROGRAM
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SMJ251616,384-BIT ERASABLE PROGRAMM
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o 441MS2516, SMJ251616,384·B11 ERA
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MOSLSITMS2532, SMJ253232,768·BIT E
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TMS253232,768-BI1 ERASABLE PROGRAMM
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MOSLSITMS2564, SMJ256465,536-BIT ER
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TMS256465,536-BIT ERASABLE PROGRAMM
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TMS2564 r SMJ256465 r536-BIT ERASAB
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MOSLSITMS2708, TMS27L08, SMJ2708, S
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TMS270B, TMS27LOBSMJ270B, SMJ27LOB1
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TMS2708. TMS27L081024·WORD BY 8·B
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SMJ2708, SMJ27L081024·WORD BY 8·B
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TMS2708, TMS27L08SMJ2708, SMJ27L081
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MOSLSITMS27162048·WORD BY 8·BIT E
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TMS27162048·WORD BY 8·BIT ERASABL
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TMS27162048-WORD BY 8-BIT ERASABLEP
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TMS2732A32,76B-BIT ERASABLE PROGRAM
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TMS2732A32,768-BIT ERASABLE PROGRAM
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TMS2732A32,768·BIT ERASABLE PROGRA
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MOSLSITMS276465,536-BI1 ERASABLE PR
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TMS276465,536·BIT ERASABLE PROGRAM
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MOSLSITMS27128131,072·BIT ERASABLE
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TMS27128131,072·BI1 ERASABLE PROGR
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TMS27128131,072·BIT ERASABLE PROGR
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TMS27128131,072·BIT ERASABLE PROGR
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MOSLSITMS46648192·WORD BY 8·BIT R
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TMS46648192·WORD BY 8·BIT READ·O
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MOSLSITMS47324096~WORD BY B·BIT RE
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MOSLSITMS47648192·WORD BY 8·BIT R
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MOSLSI, TMS49648192·WORD BY 8·BIT
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MOSLSITMS4712816,384·WORD BY 8·BI
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TMS4712816,384·WORD BY 8·BIT READ
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TMS4712816,384-WORD BY 8-BIT READ-O
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MOSLSITMS4725632.768·WORD BY 8·BI
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TMS4725632.768·WORD BY 8·BIT READ
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MOSLSITMS2114, TMS2114L1024·WORD B
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TMS2114, TMS2114L1024·WDRD BY 4·B
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TMS2114. TMS2114L1024·WORD BV 4·B
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ADVANCED MEMORYDEVELOPMENT•Fast A
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TMS2150CACHE ADDRESS COMPARATORabso
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TMS2150CACHE ADDRESS COMPARATORPARA
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MOSLSITMS40162048·WORD BY 8·BIT S
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TMS4016204H-WORD BY H-BIT STATIC RA
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TMS40162048-WDRD BY 8-BIT STATIC RA
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MOSLSITMS4044, TMS40L444096-WORD BY
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TMS4044, TMS40L444096·WORD BY 1·B
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TMS4044, TMS40L444096·WORD BY l·B
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MILITARYCMOSLSISMJ55172048-WORD BY
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SMJ5517204a·WORD BY a·BIT STATIC
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SMJ55172048·WORD BY 8·BIT STATIC
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SMJ55172048-WDRD BY 8-BIT STATIC RA
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SMJ5517204B·WORD BY B·BIT STATIC
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However, the TMS 4164 provides the
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EXPANSION OF 3242 FOR 256-CYCLE REF
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•9-6
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PAD OPENINGIN OVERCOATPADMETALPADME
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Figure 5 shows how the driver outpu
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cpI UO,leWJOJUI suo'le:>!ldd"f\)W(3
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The falling edge of RAS causes R 1
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~--------::~~:~:~~~:--------~~7,34(
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J-Lead AdvantageTexas Instruments P
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Surface Mount Component Availabilit
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fiSECONDARYVAPOR(VAPOR BLANKET)..Fi
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l>'C'2.ri'Q),..o·:::Jen5'....... o
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l>"C'2..(i"Dl...0":=(I)5"....o...3D
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An external refresh counter has bee
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l>'C'CC:)"Q).-+o·::::sen:ro ... ""
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uo!~ew"oJul suo!~ea!ldd"CD .,.., w7
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DOTCLOCKCLOCK ACLOCK C2 xWCLKRAS (A
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B. If dynamic RAM refresh is enable
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•9-38
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The TMS4416/TMS4500A board is arran
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RAS ~CAS \ I2AI \ I '-2BI '-iiD1Ro2
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9-44
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ALEACXRASMAO-MA7CASFIGURE 1 -ALE LE
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The ALE high to ClK low time is giv
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ClKALEACXRASMAO-MA7CASREFREQROY•
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CDinN~1~12 MHzClKINClKOUTWE/iOclKRD
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UO!leWJOJUI SUOlle:ludd"com~'~,i'74
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coen(J)CLOCKWRITEREADROYALEA14-A5MS
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. Access Grant CyclesThe precharge
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whereta(C)tp(BFR)(-103 + tc2 - tp(B
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•9-62
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tt(REH)TCHLLtAEL-RELRAS rise time (
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. Refresh CyclesOn refresh cycles t
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wherethus,fCLKfCLKtCACfCLK[1/2 (tCA
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R/W approach does a normal read-mod
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II(0~""6 MHzI UO!leWJO,ulSUo!le:l!l
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ClKAlE.ACR\ ,----\,\ ,----R/W\ ,---
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4. Row address setup and hold timeT
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CLKrWRITE -------I.~ ..~---REFRESH-
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The read access time on access gran
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implementations in order to relieve
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"C'2..c:rm...o·j(I)....5'o3...mo·
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RELATIVE MEMORY SIZEARCHIVAL STORAG
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increments till satisfied. This pro
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In the example shown in Figure 5, t
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»'C"E..crQ)r+0':::Jtil:;-....o...3
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•9-94
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184LOGIC SYMBOLS1. INTRODUCTIONEXPl
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LOGIC SYMBOLS4.DIAGRAMATIC SUMMARYI
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lOGIC SYMBOLSWhen RAS goes low, it
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MECHANICAL DATAgeneralElectrical ch
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MECHANICAL DATAceramic packages -ce
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MECHANICAL DATAplastic packages (N
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MECHANICAL DATAceramic chip carrier
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Texas InstrumentsSemiconductor Tech
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TI Sales Offices TI DistributorsALA
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Printed in U.S.A.•TEXASINSTRUMENT
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