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TMS4256, TMS4257262,144·8IT DYNAMIC RANDOM~ACCESS MEMORIEScapacitance over recommended supply voltage range and operating free-air temperature range, f1 MHzPARAMETER Typt MAX UNITCi(A) Input capacitance, address inputs 4 7 pFCi(O) Input capacitance, data input 4 7 pFCilRC) Input capacitance strobe inputs 8 10 pFCi(W) Input capacitance, write enable input 8 10 pFCo Output capacitance 5 10 pFt <strong>Al</strong>l typical values are at T A· = 25 DC and nominal supply voltages,switching characteristics over recommended supply voltage range and operating free·alr temperature rangeC'3:C»:;:,c..3:c3o..'
TMS4256, TMS4257262,144·8IT DYNAMIC RANDOM·ACCESS MEMORIEStiming requirements over recommended supply voltage range and operating free-air temperature rangeTMS4256-10 TMS4256-12ALT.PARAMETER TMS4257-10 TMS4257-12 UNITSYMBOLMIN MAX MIN MAXtc!PI Page-mode cycle time (read or write cycle) tpc 100 120 nstc(PM) Page-mode cycle time (read-modify-write cycle) tpCM 135 165 nstc(rd) Read cycle time t tRC 200 230 nstC!WI Write cycle time twc 200 230 nstc(rdW) Read-write/read-modify-write cycle time tRWC 235 270 nstw(CH)P Pulse duration, CAS high (page mode) tcp 40 50 nstwlCHI Pulse duration, CAS high (non-page mode) tCPN 40 50 nstw(Cl) Pulse duration, CAS low:t tCAS 50 10,000 60 10,000 nstw(RHI Pulse duration, RAS high (precharge time) tRP 90 100 nstwIRl) Pulse duration, RAS low § tRAS 100 10,000 120 10,000 nstw(WI Write pulse duration twp 35 40 nstt Transition times (rise and fall) for RAS and ~ tT 3 50 3 50 nstsuJCAi Column address setup time tASC 0 0 nstsu(RA) Row address setup time tASR 0 0 nstsu(D) Data setup time tDS 0 0 nstsu(rd) Read command setup time tRCS 0 0 nstsu(WCL)Early write command setup timebefore CAS lowtwcs0 0 nstsulWCHI Write command setup time before CAS high tCWL 30 40 nstsu(WRH) Write command setup time before RAS high tRWL 30 40 nsth(CLCA) Column address hold time after CAS low tCAH 20 20 nsth(RAI Row address hold time tRAH 15 15 nsth(RLCAI Column address hold time after RAS low tAR 70 80 nsthlCLD) Data hold time after CAS low tDH 30 35 nsth(RLD) Data hold time after RAS low tDHR 80 95 nsth(WLD) Data hold time after W low tDH 30 35 nsthiCHrdl Read command hold time after CAS high tRCH 0 0 nsthlRHrdl Read command hold time after RAS high tRRH 10 10 nsth{CLW) Write command hold time after CAS low tWCH 30 35 nsthlRLWI Write command hold time after RAS low tWCR 80 95 nstRLCHR Delay time, RAS low to CAS high 1 tCHR 20 25 nstRLCH Delay time, RAS low to CAS high tCSH 100 120 nstCHRL Delay time, CAS high to RAS low tCRP 0 0 nstCLRH Delay time, CAS low to RAS high tRSH 50 60 nstCLRL Delay time, CAS low to RAS low' tCSR 20 25 nsDelay time, CAS low to W lowtCLWL(read-modify-write cycle only)tCWD 50 60 nsDelay time, RAS low to CAS lowtRLCL (maximum value specified only tRCD 25 50 25 60 nsto guarantee access time)tRLWLDelay time, RAS low to W low(read-modify-write cycle only)tRWD 100 120 nstrf Refresh time interval tREF 4 4 ms.. ..NOTE: Timing measurements are made at the 10% and 90% POints of Input and clock tranSitIOns. In additIOn, VIL max and VIH min must be met at the10% and 90% points.t <strong>Al</strong>l cycle times assume tt = 5 ns.:I: In a read-modify-write cycle, tCLWL and tsu(WCHI must be observed. Depending on the user's transition times, this may require additional CAS low time(tw(CLII. This applies to page-mode read-modify-write also.§ In a read-modify-write cycle, tRLWL and tsu(WRHI must be observed. Depending on the user's transition times, this may require additional RAS low time(tw(RLII., CAS before RAS refresh only.......oc.C.::len> ...oE(1)~"Ceca~«a:(.)'Eca·e>C14TEXASINSTRUMENTSPOST OFFICE BOX 225012 • DALLAS. TEXAS 752654-69
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SMYOOO2.,MOS MemoryData Book1984II
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ALPHANUMERIC INDEX TO DATA SHEETSSM
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TABLE OF CONTENTSALPHANUMERIC INDEX
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MOSLSIRAMs, ROMs, EPROMsSELECTION G
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If you want to give it a try for yo
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INTERCHANGEABILITY GUIDEPART 1 -ALT
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INTERCHANGEABILITY GUIDEFUJITSUMB 8
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INTERCHANGEABILITY GUIDEMOTOROLAMCM
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INTERCHANGEABILITY GUIDETOSHIBATMM
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INTERCHANGEABILITY GUIDESTATIC RAMS
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Alphanumeric Index, Table of Conten
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GLOSSARY fTIMING CONVENTIONS/DATA S
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GLOSSARY/TIMING CONVENTIONS/DATA SH
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GLOSSARY!TIMING CONVENTIONS/DATA SH
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MOSLSITMS411616,384-811 DYNAMIC RAN
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TMS411616,384·811 DYNAMIC RANDOM·
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1MS411616,384-811 DYNAMIC RANDOM-AC
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TMS411616.384·81T DYNAMIC RANDOM·
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TMS411616,384·811 DYNAMIC RANDOM·
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zIiADDRESSES~!.....RASCASwDO"*. i,*
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TMS411616,384-81T DYNAMIC RANDOM-AC
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MOSLSITMS416165,536-81T MULTIPORT M
Page 57 and 58: TMS416165,536-811 MULTIPORT MEMORYf
Page 59 and 60: TMS416165,536-BIT MULTIPORT MEMORYs
Page 61 and 62: TMS416165,536-0IT MULTIPORT MEMORYc
Page 63 and 64: TMS416165,536·BIT MUL TIPORT MEMOR
Page 65 and 66: TMS416165,536 o BIT MUL TIPORT MEMO
Page 67 and 68: TMS416165,536·811 MULTIPORT MEMORY
Page 69 and 70: zI[~~~co,.. twiRL) _,RAS:::~ SI l L
Page 71 and 72: TMS416165,536·BIT MULTIPORT MEMORY
Page 73 and 74: ~ ___TMS416165.536-BIT MUL TIPORT M
Page 75 and 76: 0>~a~~i'i_';:;Z~~~d~c:::• s:~lTl~
Page 77 and 78: TMS416165,536-8IT MULTIPORT MEMORY1
Page 79 and 80: MOSLSITMS4164, SMJ416465,536-8IT DY
Page 81 and 82: TMS4164, SMJ416465,536-811. DYNAMIC
Page 83 and 84: TMS416465,536-811 DYNAMIC RANDOM-AC
Page 85 and 86: TMS416465,536·811 DYNAMIC RANDOM·
Page 87 and 88: TMS416465,536-811 DYNAMIC RANDOM-AC
Page 89 and 90: SMJ416465,536-011 DYNAMIC RANDOM-AC
Page 91 and 92: SMJ416465,536-81T DYNAMIC RANDOM-AC
Page 93 and 94: SMJ416465,536-011 DYNAMIC RANDOM-AC
Page 95 and 96: TMS4164, SMJ416465,536·81T DYNAMIC
Page 97 and 98: TMS4164, SMJ416465,536·8IT DYNAMIC
Page 99 and 100: z~~gz~.J:>.c1J
Page 101 and 102: Z~d~~~~0,'...."CIIICCCD:3of. twIRL)
Page 103 and 104: MOSLSITMS4256. TMS4257262.144·8IT
Page 105 and 106: TMS4256, TMS4257262,144·8IT DYNAMI
Page 107: TMS4256, TMS4257262,144-8IT DYNAMIC
Page 111 and 112: TMS4257262.144·8IT DYNAMIC RANDOM
Page 113 and 114: TMS4256, TMS4257262,144·BIT DYNAMI
Page 117 and 118: TMS4257262,144·81T DYNAMIC RANDOM
Page 119 and 120: Z~d~~~~.!..JcoNOTE:'CIIICO(1),- twI
Page 121 and 122: i:Z~d~~z~+:>0Co ......"CCICCCD:3og.
Page 125 and 126: MOSLSITMS4416. SMJ441616.384·WORD
Page 127 and 128: TMS4416, SMJ441616,384·WORD BY 4·
Page 129 and 130: TMS441616,384-WORD BY 4-BI1 DYNAMIC
Page 131 and 132: TMS441616,384-WORD BY 4-BIT DYNAMIC
Page 135 and 136: SMJ441616,384·WORD BY 4·BIT DYNAM
Page 137 and 138: SMJ441616,384-WORD BY 4-B11 DYNAMIC
Page 139 and 140: 1MS4416, SMJ441616,384·WORD BY 4·
Page 141 and 142: TMS4416, SMJ441616,384·WORD BY 4·
Page 143 and 144: z~~~z@towRAs-{rCASAO·A7wDQG:::'.!A
Page 145 and 146: 1:'QltC(()3oc..(()C3~~n_:::Z~~~;;;
Page 147 and 148: MOSLSITMS446465,536-WORD BY 4-BIT D
Page 149 and 150: TMS446465,536-WORD 8Y 4-81T DYNAMIC
Page 151 and 152: TMS446465,536·WORD BY 4·BIT DYNAM
Page 153 and 154: 1MS446465,536·WORD BY 4·B11 DYNAM
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RASCAS----{! '.,ReIVIH i~VIL I tRLC
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~~~n_;;;z~~. ~~tTlg ;O~d ;;;t::=z~@
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~Z~~iZ~tw '"[:;-~~~~~:TCDCO ".;:r0~
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MEMORY SUPPORTLSITMS4500ADYNAMIC RA
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TMS4500ADYNAMIC RAM CONTROLLERpin d
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TMS4500ADYNAMIC RAM CONTROLLERarbit
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TMS4500ADYNAMIC RAM CONTROLLERswitc
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TMS4500ADYNAMIC RAM CONTROLLERacces
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TMS4500ADYNAMIC RAM CONTROLLERoutpu
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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TMS4500ADYNAMIC RAM CONTROLLERtypic
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•••••MOSLSI65,536 X 4 Org
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TM4164EC465,536 BY 4·BIT DYNAMIC R
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MOSLSITM4164EL965,536 BY 9·BIT DYN
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TM4164EL965,536 BY 9-BIT DYNAMIC RA
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••••••••0MOSLSI65,5
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TM4164FL865,536 BY 8·BIT DYNAMIC R
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MOSLSITMS2516. SMJ251616.384-BIT ER
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TMS2516, SMJ251616,384-BIT ERASABLE
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TMS251616,384·BIT ERASABLE PROGRAM
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SMJ251616,384-BIT ERASABLE PROGRAMM
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o 441MS2516, SMJ251616,384·B11 ERA
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MOSLSITMS2532, SMJ253232,768·BIT E
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TMS253232,768-BI1 ERASABLE PROGRAMM
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MOSLSITMS2564, SMJ256465,536-BIT ER
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TMS256465,536-BIT ERASABLE PROGRAMM
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TMS2564 r SMJ256465 r536-BIT ERASAB
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MOSLSITMS2708, TMS27L08, SMJ2708, S
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TMS270B, TMS27LOBSMJ270B, SMJ27LOB1
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TMS2708. TMS27L081024·WORD BY 8·B
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SMJ2708, SMJ27L081024·WORD BY 8·B
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TMS2708, TMS27L08SMJ2708, SMJ27L081
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MOSLSITMS27162048·WORD BY 8·BIT E
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TMS27162048·WORD BY 8·BIT ERASABL
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TMS27162048-WORD BY 8-BIT ERASABLEP
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TMS2732A32,76B-BIT ERASABLE PROGRAM
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TMS2732A32,768-BIT ERASABLE PROGRAM
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TMS2732A32,768·BIT ERASABLE PROGRA
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MOSLSITMS276465,536-BI1 ERASABLE PR
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TMS276465,536·BIT ERASABLE PROGRAM
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MOSLSITMS27128131,072·BIT ERASABLE
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TMS27128131,072·BI1 ERASABLE PROGR
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TMS27128131,072·BIT ERASABLE PROGR
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TMS27128131,072·BIT ERASABLE PROGR
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MOSLSITMS46648192·WORD BY 8·BIT R
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TMS46648192·WORD BY 8·BIT READ·O
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MOSLSITMS47324096~WORD BY B·BIT RE
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MOSLSITMS47648192·WORD BY 8·BIT R
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MOSLSI, TMS49648192·WORD BY 8·BIT
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MOSLSITMS4712816,384·WORD BY 8·BI
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TMS4712816,384·WORD BY 8·BIT READ
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TMS4712816,384-WORD BY 8-BIT READ-O
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MOSLSITMS4725632.768·WORD BY 8·BI
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TMS4725632.768·WORD BY 8·BIT READ
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MOSLSITMS2114, TMS2114L1024·WORD B
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TMS2114, TMS2114L1024·WDRD BY 4·B
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TMS2114. TMS2114L1024·WORD BV 4·B
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ADVANCED MEMORYDEVELOPMENT•Fast A
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TMS2150CACHE ADDRESS COMPARATORabso
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TMS2150CACHE ADDRESS COMPARATORPARA
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MOSLSITMS40162048·WORD BY 8·BIT S
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TMS4016204H-WORD BY H-BIT STATIC RA
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TMS40162048-WDRD BY 8-BIT STATIC RA
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MOSLSITMS4044, TMS40L444096-WORD BY
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TMS4044, TMS40L444096·WORD BY 1·B
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TMS4044, TMS40L444096·WORD BY l·B
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MILITARYCMOSLSISMJ55172048-WORD BY
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SMJ5517204a·WORD BY a·BIT STATIC
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SMJ55172048·WORD BY 8·BIT STATIC
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SMJ55172048-WDRD BY 8-BIT STATIC RA
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SMJ5517204B·WORD BY B·BIT STATIC
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However, the TMS 4164 provides the
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EXPANSION OF 3242 FOR 256-CYCLE REF
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•9-6
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PAD OPENINGIN OVERCOATPADMETALPADME
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Figure 5 shows how the driver outpu
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cpI UO,leWJOJUI suo'le:>!ldd"f\)W(3
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The falling edge of RAS causes R 1
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~--------::~~:~:~~~:--------~~7,34(
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J-Lead AdvantageTexas Instruments P
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Surface Mount Component Availabilit
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fiSECONDARYVAPOR(VAPOR BLANKET)..Fi
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l>'C'2.ri'Q),..o·:::Jen5'....... o
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l>"C'2..(i"Dl...0":=(I)5"....o...3D
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An external refresh counter has bee
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l>'C'CC:)"Q).-+o·::::sen:ro ... ""
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uo!~ew"oJul suo!~ea!ldd"CD .,.., w7
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DOTCLOCKCLOCK ACLOCK C2 xWCLKRAS (A
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B. If dynamic RAM refresh is enable
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•9-38
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The TMS4416/TMS4500A board is arran
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RAS ~CAS \ I2AI \ I '-2BI '-iiD1Ro2
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9-44
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ALEACXRASMAO-MA7CASFIGURE 1 -ALE LE
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The ALE high to ClK low time is giv
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ClKALEACXRASMAO-MA7CASREFREQROY•
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CDinN~1~12 MHzClKINClKOUTWE/iOclKRD
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UO!leWJOJUI SUOlle:ludd"com~'~,i'74
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coen(J)CLOCKWRITEREADROYALEA14-A5MS
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. Access Grant CyclesThe precharge
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whereta(C)tp(BFR)(-103 + tc2 - tp(B
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•9-62
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tt(REH)TCHLLtAEL-RELRAS rise time (
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. Refresh CyclesOn refresh cycles t
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wherethus,fCLKfCLKtCACfCLK[1/2 (tCA
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R/W approach does a normal read-mod
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II(0~""6 MHzI UO!leWJO,ulSUo!le:l!l
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ClKAlE.ACR\ ,----\,\ ,----R/W\ ,---
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4. Row address setup and hold timeT
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CLKrWRITE -------I.~ ..~---REFRESH-
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The read access time on access gran
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implementations in order to relieve
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"C'2..c:rm...o·j(I)....5'o3...mo·
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RELATIVE MEMORY SIZEARCHIVAL STORAG
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increments till satisfied. This pro
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In the example shown in Figure 5, t
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»'C"E..crQ)r+0':::Jtil:;-....o...3
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•9-94
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184LOGIC SYMBOLS1. INTRODUCTIONEXPl
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LOGIC SYMBOLS4.DIAGRAMATIC SUMMARYI
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lOGIC SYMBOLSWhen RAS goes low, it
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MECHANICAL DATAgeneralElectrical ch
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MECHANICAL DATAceramic packages -ce
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MECHANICAL DATAplastic packages (N
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MECHANICAL DATAceramic chip carrier
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Texas InstrumentsSemiconductor Tech
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TI Sales Offices TI DistributorsALA
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Printed in U.S.A.•TEXASINSTRUMENT
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