NTE3045 Optoisolator Silicon NPN Darlington Phototransistor Output

Electrical Characteristics: (T A = +25°C unless otherwise specified)Input LEDParameter Symbol Test Conditions Min Typ Max UnitReverse Leakage Current I R V R = 3V – 0.05 10 µAForward Voltage V F I F = 10mA – 1.15 2.0 VCapacitance C V R = 0, f = 1MHz – 18 – pFPhotodarlington (T A = +25°C, I F = 0 unless otherwise specified)Collector–Emitter Dark Current I CEO V CE = 60V – – 1 µACollector–Emitter Breakdown Voltage V (BR)CEO I C = 1mA 80 – – VEmitter–Collector Breakdown Voltage V (BR)ECO I E = 100µA 5 – – VCoupled (T A = +25°C unless otherwise specified)Collector Output Current I C V CE = 1.5V, I F = 10mA 50 – – mAIsolation Surge Voltage V ISO 60Hz Peak AC, 5sec, 7500 – – VNote 2, Note 3Isolation Resistance R ISO V = 500V, Note 2 – 10 11 – ΩIsolation Capacitance C ISO v = 0, f = 1MHz, Note 2 – 0.2 – pFSwitchingTurn–On Time t on V CC = 10V,R ΩTurn–Off Time t L = 100Ω,off I F = 5mARise Time t r– 3.5 – µs– 95 – µs– 1 – µsFall Time t f – 2 – µsNote 2. For this test LED Pin1 and Pin2 are common and Phototransistor Pin4 and Pin5 are common.Note 3. Isolation Surge Voltage, V ISO , is an internal device dielectric breakdown rating.Pin Connection Diagram65 41 2 3.260(6.6)MaxAnode16N.C..070 (1.78) MaxCathode25Collector.350 (8.89)Max.300 (7.62)N.C.34Emitter.200 (5.08)Max.350(8.89)Max.085 (2.16) Max.100 (2.54)