Analysis of 320X240 uncooled microbolometer focal plane array ...
Analysis of 320X240 uncooled microbolometer focal plane array ... Analysis of 320X240 uncooled microbolometer focal plane array ...
26vacuum to reduce the heat leakage to air. The heat leakage degrades the detectorsensitivity by reducing the high thermal isolation of the air-bridge structure. In order for
27reflection (AR) coated Ge window which transmits 98% of in-band IR signal. The heightof the package is less than 0.5 inches, and lateral dimensions are 1.5 inches.2.3 FabricationAs mentioned before, one of the advantage of the microbolometer its production processcompatibility with the standard silicon IC process. VOx thermal isolation structure arraysare co-deposited on top of the ROIC wafer using standard silicon IC thin film processing.Through the removal of the sacrificial layer between the thermal isolation structures andthe ROIC at the end of the fabrication process, high level of thermal isolation is achieved.The fabrication of the microbolometer involves micromachining techniques. Thesimplified microbolometer fabrication step are described below [9].1. All the necessary readout electronics, including transistors and metal interconnections,are imbedded in a monolithic silicon wafer.2. Sacrificial layer islands are deposited on top of the readout electronic.3. Deposit supporting bridge material (silicon nitride).4. Deposit metal connection for the detecting material.5. Deposit detector (thermal mass) material (vanadium oxide).6. Deposit supporting bridge material (silicon nitride).7. Etch away the sacrificial layer islands.
- Page 1 and 2: Copyright Warning & RestrictionsThe
- Page 3 and 4: ABSTRACTANALYSIS OF 320X240 UNCOOLE
- Page 6 and 7: APPROVAL PAGEANALYSIS OF 320X240 UN
- Page 8 and 9: This thesis is dedicated tomy famil
- Page 10 and 11: TABLE OF CONTENTSChapterPage1 INTRO
- Page 13 and 14: CHAPTER 1INTRODUCTIONIn recent year
- Page 17 and 18: 5radiation (LWIR) between 811m to 1
- Page 19 and 20: Figure 2.1 Simplified bolometer str
- Page 21 and 22: 9The first function of the right ha
- Page 23 and 24: 11corresponding to T 1 . With radia
- Page 25 and 26: 13then the transient term goes to z
- Page 27 and 28: 15The signal voltage (Eauation 2.26
- Page 29 and 30: 172.2.3 NoiseThe detection capabili
- Page 31 and 32: 19F is the f/# of the optics, VN is
- Page 33 and 34: 21To obtain the temperature fluctua
- Page 35 and 36: 23provide protection against detect
- Page 37: ZE1 L4t46LII C. 10 aft( IL.The UFPA
- Page 41 and 42: 29170 synchronization standard sign
- Page 43 and 44: 31amplified and integrated detector
- Page 45 and 46: 33processing module by a scan conve
- Page 47 and 48: Figure 3.3 UFPA camera platform.35
- Page 49 and 50: 37high mechanical strength as shown
- Page 51 and 52: Unlike the photon sensors, the micr
- Page 53 and 54: 414.2 The Controller DesignThe cont
- Page 55 and 56: 43performed at Inframetrics to dete
- Page 57 and 58: 45c) Heating of the TEC without hea
- Page 59 and 60: 47[(RiR2C1)s + — (R1 + R2) 4.1( )
- Page 61 and 62: 49The third amplifier stage has the
- Page 63 and 64: t 1
- Page 65 and 66: 53c) T showing the response time of
- Page 67: REFERENCES1. R. A. Wood, "Uncooled
27reflection (AR) coated Ge window which transmits 98% <strong>of</strong> in-band IR signal. The height<strong>of</strong> the package is less than 0.5 inches, and lateral dimensions are 1.5 inches.2.3 FabricationAs mentioned before, one <strong>of</strong> the advantage <strong>of</strong> the <strong>microbolometer</strong> its production processcompatibility with the standard silicon IC process. VOx thermal isolation structure <strong>array</strong>sare co-deposited on top <strong>of</strong> the ROIC wafer using standard silicon IC thin film processing.Through the removal <strong>of</strong> the sacrificial layer between the thermal isolation structures andthe ROIC at the end <strong>of</strong> the fabrication process, high level <strong>of</strong> thermal isolation is achieved.The fabrication <strong>of</strong> the <strong>microbolometer</strong> involves micromachining techniques. Thesimplified <strong>microbolometer</strong> fabrication step are described below [9].1. All the necessary readout electronics, including transistors and metal interconnections,are imbedded in a monolithic silicon wafer.2. Sacrificial layer islands are deposited on top <strong>of</strong> the readout electronic.3. Deposit supporting bridge material (silicon nitride).4. Deposit metal connection for the detecting material.5. Deposit detector (thermal mass) material (vanadium oxide).6. Deposit supporting bridge material (silicon nitride).7. Etch away the sacrificial layer islands.
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