TDA8358J Full bridge vertical deflection output circuit in ... - Laro
TDA8358J Full bridge vertical deflection output circuit in ... - Laro TDA8358J Full bridge vertical deflection output circuit in ... - Laro
Philips SemiconductorsFull bridge vertical deflection output circuitin LVDMOS with east-west amplifierProduct specificationTDA8358JFEATURES• Few external components required• High efficiency fully DC-coupled vertical bridge outputcircuit• Vertical flyback switch with short rise and fall times• Built-in guard circuit• Thermal protection circuit• Improved EMC performance due to differential inputs• East-west output stage.GENERAL DESCRIPTIONThe TDA8358J is a power circuit for use in 90° and 110°colour deflection systems for 25 to 200 Hz fieldfrequencies, and for 4 : 3 and 16 : 9 picture tubes. The ICcontains a vertical deflection output circuit, operating as ahigh efficiency class G system. The full bridge outputcircuit allows DC coupling of the deflection coil incombination with single positive supply voltages.The east-west output stage is able to supply the sinkcurrent for a diode modulator circuit.The IC is constructed in a Low Voltage DMOS (LVDMOS)process that combines bipolar, CMOS and DMOSdevices. DMOS transistors are used in the output stagebecause of absence of second breakdown.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITSuppliesV P supply voltage 7.5 12 18 VV FB flyback supply voltage 2 × V P 45 66 VI q(P)(av) average quiescent supply current during scan − 10 15 mAI q(FB)(av) average quiescent flyback supply current during scan − − 10 mAP tot total power dissipation − − 15 WInputs and outputsV i(p-p) input voltage (peak-to-peak value) − 1000 1500 mVI o(p-p) output current (peak-to-peak value) − − 3.2 AFlyback switchI o(peak) maximum (peak) output current t ≤ 1.5 ms − − ±1.8 AEast-west amplifierV o output voltage − − 68 VV I(bias) input bias voltage 2 − 3.2 VI o output current − − 750 mAThermal data; in accordance with IEC 747-1T stg storage temperature −55 − +150 °CT amb ambient temperature −25 − +85 °CT j junction temperature − − +150 °C2002 Sep 25 2
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Philips Semiconductors<strong>Full</strong> <strong>bridge</strong> <strong>vertical</strong> <strong>deflection</strong> <strong>output</strong> <strong>circuit</strong><strong>in</strong> LVDMOS with east-west amplifierProduct specification<strong>TDA8358J</strong>FEATURES• Few external components required• High efficiency fully DC-coupled <strong>vertical</strong> <strong>bridge</strong> <strong>output</strong><strong>circuit</strong>• Vertical flyback switch with short rise and fall times• Built-<strong>in</strong> guard <strong>circuit</strong>• Thermal protection <strong>circuit</strong>• Improved EMC performance due to differential <strong>in</strong>puts• East-west <strong>output</strong> stage.GENERAL DESCRIPTIONThe <strong>TDA8358J</strong> is a power <strong>circuit</strong> for use <strong>in</strong> 90° and 110°colour <strong>deflection</strong> systems for 25 to 200 Hz fieldfrequencies, and for 4 : 3 and 16 : 9 picture tubes. The ICconta<strong>in</strong>s a <strong>vertical</strong> <strong>deflection</strong> <strong>output</strong> <strong>circuit</strong>, operat<strong>in</strong>g as ahigh efficiency class G system. The full <strong>bridge</strong> <strong>output</strong><strong>circuit</strong> allows DC coupl<strong>in</strong>g of the <strong>deflection</strong> coil <strong>in</strong>comb<strong>in</strong>ation with s<strong>in</strong>gle positive supply voltages.The east-west <strong>output</strong> stage is able to supply the s<strong>in</strong>kcurrent for a diode modulator <strong>circuit</strong>.The IC is constructed <strong>in</strong> a Low Voltage DMOS (LVDMOS)process that comb<strong>in</strong>es bipolar, CMOS and DMOSdevices. DMOS transistors are used <strong>in</strong> the <strong>output</strong> stagebecause of absence of second breakdown.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITSuppliesV P supply voltage 7.5 12 18 VV FB flyback supply voltage 2 × V P 45 66 VI q(P)(av) average quiescent supply current dur<strong>in</strong>g scan − 10 15 mAI q(FB)(av) average quiescent flyback supply current dur<strong>in</strong>g scan − − 10 mAP tot total power dissipation − − 15 WInputs and <strong>output</strong>sV i(p-p) <strong>in</strong>put voltage (peak-to-peak value) − 1000 1500 mVI o(p-p) <strong>output</strong> current (peak-to-peak value) − − 3.2 AFlyback switchI o(peak) maximum (peak) <strong>output</strong> current t ≤ 1.5 ms − − ±1.8 AEast-west amplifierV o <strong>output</strong> voltage − − 68 VV I(bias) <strong>in</strong>put bias voltage 2 − 3.2 VI o <strong>output</strong> current − − 750 mAThermal data; <strong>in</strong> accordance with IEC 747-1T stg storage temperature −55 − +150 °CT amb ambient temperature −25 − +85 °CT j junction temperature − − +150 °C2002 Sep 25 2
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