Novel Nano Novel Nano-Engineered Semiconductors for ... - Caltech

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2.2. Fabrication of NWs• Mechanism of the growth vapor-liquid-crystal:id lV. G. Dubrovskiia etal.,Semiconductors 43, (2009)An ensembleof GaAs-NWsgrown by MBEAn individualGaAs-NW
• Formation of NWs by selective epitaxy on treated surfaces w/o a catalyst:V. G. Dubrovskiia etal., Semiconductors43, (2009)GaAs-NWsGaAs-NWsgrown on thegrown on theGaAs (111)GaAs (111)surface forsurface ford 0 = 200 nmd 0 = 50 nm• Other growth mechanisms such as self-assembly, etc.
Page 1 and 2: Novel Nano-Engineered Semiconductor
Page 3 and 4: 1. Nanotechnology & nanomaterials--
Page 5 and 6: 1. Nanotechnology & nanomaterials2.
Page 7: Polarization-sensitive & spatially
Page 11 and 12: Atomically resolved imaging & spect
Page 13 and 14: Making a transistor out of a strain
Page 15 and 16: 1. Nanotechnology & nanomaterials2.
Page 17 and 18: 3.2. Physics of grapheneElectronic
Page 20: Challenges & Current Research DIrec
Page 23 and 24: STM calibration on graphite• We t
Page 25 and 26: STM studies of graphene on SiO 2•
Page 27 and 28: Strain-induced induced modification
Page 29 and 30: Strain-induced induced structural &
Page 31 and 32: 3.4. Potential applications to ligh

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