Novel Nano Novel Nano-Engineered Semiconductors for ... - Caltech

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Modifications to electronic properties due to structural changesTopography(distortedstructure)t Fouriertrans<strong>for</strong>medstructuretN.-C. Yeh etal, (2010).Conductancespectra ofrepresentativeregionsabConductancespectra alongthe dashedline in theupper leftfigure.
3.4. Potential applications to light emission & photodetection• Graphene nanoribbons: semiconducting energy gaps may be engineeredby the controlling the width, from 0 ~ 200 meV.• Graphane: semiconducting energy gaps may be engineered by controllingthe hydrogen coverage, from 0 ~ 3.5 eV.Device conceptLight emissionThe light emittingprocess may bereversed <strong>for</strong> thedetection ofphotocurrents.t(or graphenenanoribbons)• Future work: measurements of the I-V characteristics & photocurrents.
Page 1 and 2: Novel Nano-Engineered Semiconductor
Page 3 and 4: 1. Nanotechnology & nanomaterials--
Page 5 and 6: 1. Nanotechnology & nanomaterials2.
Page 7 and 8: Polarization-sensitive & spatially
Page 9 and 10: • Formation of NWs by selective e
Page 11 and 12: Atomically resolved imaging & spect
Page 13 and 14: Making a transistor out of a strain
Page 15 and 16: 1. Nanotechnology & nanomaterials2.
Page 17 and 18: 3.2. Physics of grapheneElectronic
Page 20: Challenges & Current Research DIrec
Page 23 and 24: STM calibration on graphite• We t
Page 25 and 26: STM studies of graphene on SiO 2•
Page 27 and 28: Strain-induced induced modification
Page 29: Strain-induced induced structural &

Novel Nano Novel Nano-Engineered Semiconductors for ... - Caltech

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