Novel Nano Novel Nano-Engineered Semiconductors for ... - Caltech

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The out-of-plane phonon frequencies increase with increasingstrain, suggesting coupling of -electrons to the underlyingphonons of the dielectric SiO 2 .N.-C. Yeh et al, preprint, (2010).
Strain-induced induced structural & conductance modificationsin large-scale CVD grown graphene on copper• CVD growth of graphene on copper foils at ~ 1000°C under hydrogen gas withCH 4 partial pressure.• Large differences in the thermal contraction coefficients of graphene and copperlead to ripple structures. [ N.-C. Yeh et al, (2010) ]
Page 1 and 2: Novel Nano-Engineered Semiconductor
Page 3 and 4: 1. Nanotechnology & nanomaterials--
Page 5 and 6: 1. Nanotechnology & nanomaterials2.
Page 7 and 8: Polarization-sensitive & spatially
Page 9 and 10: • Formation of NWs by selective e
Page 11 and 12: Atomically resolved imaging & spect
Page 13 and 14: Making a transistor out of a strain
Page 15 and 16: 1. Nanotechnology & nanomaterials2.
Page 17 and 18: 3.2. Physics of grapheneElectronic
Page 20: Challenges & Current Research DIrec
Page 23 and 24: STM calibration on graphite• We t
Page 25 and 26: STM studies of graphene on SiO 2•
Page 27: Strain-induced induced modification
Page 31 and 32: 3.4. Potential applications to ligh

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