Novel Nano Novel Nano-Engineered Semiconductors for ... - Caltech

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Strained-induced induced conductance modulations• Constant-V B conductance maps at smallV B values correlate with overall surfacecorrugation and the resulting strain fields.Topography V B = 0• Maps of strain tensor components:S 00V B = 80 meV V B = 240 meVS 00S xxS xx (x,y) = u x (x,y)/xS yy (x,y) = u y (x,y)/yS xy (x,y) = S xy (x,y)= [u x (x,y)/y +u y (x,y)/x]/2Displacement field:u(x,y) = [u x (x,y) e x +u y (x,y) e y ]S xyS yy
Strain-induced induced modifications in the out-ofof-plane phonon-assisted tunneling gaps & conductanceT = 0Theoreticalcurve with ph= 42 meVThis work:M.L. Teague et al, <strong>Nano</strong>Letters 9, 2542 (2009)T = 0Theoreticalcurve with ph = 24 meVReferences:• Y. Zhang et al, Nature ph variesPhys. 4 (2008). from 21 meV• T.O. Wehling et al,to 44 meV.PRL 101 (2008).
Page 1 and 2: Novel Nano-Engineered Semiconductor
Page 3 and 4: 1. Nanotechnology & nanomaterials--
Page 5 and 6: 1. Nanotechnology & nanomaterials2.
Page 7 and 8: Polarization-sensitive & spatially
Page 9 and 10: • Formation of NWs by selective e
Page 11 and 12: Atomically resolved imaging & spect
Page 13 and 14: Making a transistor out of a strain
Page 15 and 16: 1. Nanotechnology & nanomaterials2.
Page 17 and 18: 3.2. Physics of grapheneElectronic
Page 20: Challenges & Current Research DIrec
Page 23 and 24: STM calibration on graphite• We t
Page 25: STM studies of graphene on SiO 2•
Page 29 and 30: Strain-induced induced structural &
Page 31 and 32: 3.4. Potential applications to ligh

Novel Nano Novel Nano-Engineered Semiconductors for ... - Caltech

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