Novel Nano Novel Nano-Engineered Semiconductors for ... - Caltech

Graphene bipolar field effect transistors (FETs)Hole dopedElectron dopedDiracpointEFE FE FThe unique bandstructuresof graphene suppress carrierbackscattering, leading toextremely high mobility.• Conductivity ( ) increases linearly with charge density (n): V g n• Extremely high mobility: ~ 15,000 cm 2 /Vs in as-prepared, non-optimized samples,compared to ~ 2,000 cm 2 /Vs for silicon.• Conductivity remains finite at Dirac point min(Novoselov et al, Nature, 2005, Zhang et al, Nature 2005, Miao et al, Science 2007, Kimgroup, Fuhrer group….)