Novel Nano Novel Nano-Engineered Semiconductors for ... - Caltech

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Strain-enhanced energy gap in silicon nano-pillarsSpatially resolved spectroscopy ofHF-etched silicon nano-pillarsSurface topography from STMafter HF chemical etching3 eV250 nmThe energy gap increases from ~ 1.11 eVfor crystalline silicon to ~ 3.o eV for thestrained silicon nano-pillars.(Our preliminary STM results)Further quantum confinement isexpected for a finite magnetic fieldparallel to the silicon nano-pillars,because the diameter of the nanopillarsis typically smaller than thecyclotron orbit.
Making a transistor out of a strained silicon nano-pillar:(Courtesy of Axel Scherer)
Page 1 and 2: Novel Nano-Engineered Semiconductor
Page 3 and 4: 1. Nanotechnology & nanomaterials--
Page 5 and 6: 1. Nanotechnology & nanomaterials2.
Page 7 and 8: Polarization-sensitive & spatially
Page 9 and 10: • Formation of NWs by selective e
Page 11: Atomically resolved imaging & spect
Page 15 and 16: 1. Nanotechnology & nanomaterials2.
Page 17 and 18: 3.2. Physics of grapheneElectronic
Page 20: Challenges & Current Research DIrec
Page 23 and 24: STM calibration on graphite• We t
Page 25 and 26: STM studies of graphene on SiO 2•
Page 27 and 28: Strain-induced induced modification
Page 29 and 30: Strain-induced induced structural &
Page 31 and 32: 3.4. Potential applications to ligh

Novel Nano Novel Nano-Engineered Semiconductors for ... - Caltech

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