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Calibration of a Terrestrial Laser Scanner - Institute of Geodesy and ...

Calibration of a Terrestrial Laser Scanner - Institute of Geodesy and ...

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16 2. Components <strong>of</strong> <strong>Terrestrial</strong> <strong>Laser</strong> <strong>Scanner</strong>2.1.6 Overview <strong>of</strong> Distance Measurement Techniques in <strong>Terrestrial</strong> <strong>Laser</strong> <strong>Scanner</strong>sTable 2.2 gives an overview <strong>of</strong> the distance techniquesthat are used in terrestrial laser scanners. The corre¬lation between the distance measurement technique on one h<strong>and</strong> <strong>and</strong> the range <strong>and</strong> data acquisition rateon the other can be seen.Table 2.2:Overview <strong>of</strong> distance measurement techniques in terrestrial laser scanners. The data acquisition rate, i.e.frequency, <strong>and</strong> the range depend on the distance measurement technique.<strong>Laser</strong> <strong>Scanner</strong> Manufacturer Distance Technique Range[m] Frequency [kHz]CPW 8000 Callidus direct TOF 80 28LS 880 FARO AMCW 76 120HDS 3000 Leica Geosystems direct TOF 300 1.8LMS-Z420i Riegl direct TOF 800 12GX Trimble direct TOF 350 5Imager 5003 Zoller+Frohlich AMCW 53 6252.1.7 Avalanche Photo Diode (APD)An avalanche photodiode (APD) is a photodiode that internally amplifies the photocurrent by an avalancheprocess. A large reverse-bias voltage, typically over 100 volts, is applied across the active region.This volt¬age causes the electrons initially generated by the incident photons to accelerate as they move through theAPD active region. As these electrons collide with other electrons in the semiconductor material, they causea fraction <strong>of</strong> them to become part <strong>of</strong> the photocurrent. This process is known as avalanche multiplication.Avalanche multiplicationcontinues to occur until the electrons move out <strong>of</strong> the active area <strong>of</strong> the APD.Figure 2.10: Layout <strong>of</strong> silicon photodiodes: conventional design (left) <strong>and</strong> pin layout (right) according to [Meschede,2004].The gain <strong>of</strong> the APD can be changed by changing the reverse-bias voltage.A larger reverse-bias voltageresults in a larger gain. However, a larger reverse-bias voltagealso results in increased noise levels. Excessnoise resulting from the avalanche multiplication process places a limit on the useful gain<strong>of</strong> the APD.The avalanche process introduces excess noise because every photo-generated carrier does not undergo thesame multiplication.An APD is compact <strong>and</strong> immune to magnetic fields, requires low currents, is difficult to overload <strong>and</strong> hashigh quantum efficiency that can reach 90 %. The noise properties <strong>of</strong> an APD are affected bythat the APD is made <strong>of</strong>. Typicalthe materialssemiconductor materials used in the construction <strong>of</strong> low-noise APDsinclude silicon (Si), indium gallium arsenide (InGaAs) <strong>and</strong> germanium (Ge). More information concerningphotons <strong>and</strong> APD can be found in [Saleh <strong>and</strong> Teich, 1991] <strong>and</strong> [Meschede, 2004].

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