BPW17N Silicon NPN Phototransistor - Vishay

www.vishay.comBPW17NVishay SemiconductorsSilicon NPN PhototransistorDESCRIPTION94 8638-1BPW17N is a silicon NPN phototransistor with high radiantsensitivity in clear, T-3/4 plastic package with lens. It issensitive to visible and near infrared radiation. On PCB thispackage size enables assembly of arrays with 2.54 mmpitch.FEATURES• Package type: leaded• Package form: T-¾• Dimensions (in mm): Ø 1.8• High photo sensitivity• High radiant sensitivity• Suitable for visible and near infrared radiation• Fast response times• Angle of half sensitivity: ϕ = ± 12°• Comliant to RoHS Directive 2002/95/EC and inaccordance to WEEE 2002/96/ECNote** Please see document “Vishay Material Category Policy”:www.vishay.com/doc?99902APPLICATIONS• Detector in electronic control and drive circuitsPRODUCT SUMMARYCOMPONENT I ca (mA) ϕ (deg) λ 0.1 (nm)BPW17N 1.0 ± 12 450 to 1040Note• Test condition see table “Basic Characteristics”ORDERING INFORMATIONORDERING CODE PACKAGING REMARKS PACKAGE FORMBPW17N Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-¾Note• MOQ: minimum order quantityABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITION SYMBOL VALUE UNITCollector emitter voltage V CEO 32 VEmitter collector voltage V ECO 5 VCollector current I C 50 mACollector peak current t p /T = 0.5, t p ≤ 10 ms I CM 100 mAPower dissipation T amb ≤ 55 °C P V 100 mWJunction temperature T j 100 °COperating temperature range T amb - 40 to + 100 °CStorage temperature range T stg - 40 to + 100 °CSoldering temperature t ≤ 3 s T sd 260 °CThermal resistance junction/ambient Connected with Cu wire, 0.14 mm 2 R thJA 450 K/WRev. 1.8, 23-Aug-11 1 Document Number: 81516For technical questions, contact: detectortechsupport@vishay.comTHIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.comBPW17NVishay Semiconductors125P V- Power Dissipation (mW)100755025R thJA= 450 K/W00 20 40 60 8094 8308 T amb- Ambient Temperature (°C)100Fig. 1 - Power Dissipation Limit vs. Ambient TemperatureBASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNITCollector emitter breakdown voltage I C = 1 mA V (BR)CEO 32 VCollector emitter dark current V CE = 20 V, E = 0 I CEO 1 200 nACollector emitter capacitance V CE = 5 V, f = 1 MHz, E = 0 C CEO 8 pFCollector light currentE e = 1 mW/cm 2 , λ = 950 nm,V CE = 5 VI ca 0.5 1.0 mAAngle of half sensitivity ϕ ± 12 degWavelength of peak sensitivity λ p 825 nmRange of spectral bandwidth λ 0.1 450 to 1040 nmCollector emitter saturation voltageE e = 1 mW/cm 2 , λ = 950 nm,I C = 0.1 mAV CEsat 0.3 VTurn-on time V S = 5 V, I C = 5 mA, R L = 100 Ω t on 4.8 μsTurn-off time V S = 5 V, I C = 5 mA, R L = 100 Ω t off 5.0 μsCut-off frequency V S = 5 V, I C = 5 mA, R L = 100 Ω f c 120 kHzBASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)I CEO- Collector Dark Current (nA)10 410 3V CE= 20 V10 210 1I ca rel - Relative Collector Current1.81.61.41.21.00.8V CE = 5 VE e = 1 mW/cm 2λ = 950 nm2.010 094 82352040 60 80T amb- Ambient Temperature (°C)1000.60 20 40 60 80 10094 8239 T amb - Ambient Temperature (°C)Fig. 1 - Collector Dark Current vs. Ambient Temperature Fig. 2 - Relative Collector Current vs. Ambient TemperatureRev. 1.8, 23-Aug-11 2 Document Number: 81516For technical questions, contact: detectortechsupport@vishay.comTHIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.comBPW17NVishay Semiconductors1012I ca - Collector Light Current (mA)94 831310.10.01V CE =5Vλ = 950 nm0.0010.01 0.1 1E e - Irradiance (mW/cm 2 )10t on /toff-Turn on / Turn off Time (µs)94 8238108642V CE =5VR L = 100 Ωλ = 950 nmt offt on00 4 8 12I C - Collector Current (mA)16Fig. 3 - Collector Light Current vs. IrradianceFig. 6 - Turn-on/Turn-off Time vs. Collector CurrentI ca - Collector Light Current (mA)94 8242101λ = 950 nm0.10.1 1 10E e = 1 mW/cm 20.5 mW/cm 20.2 mW/cm 2V CE - Collector Emitter Voltage (V)100Fig. 4 - Collector Light Current vs. Collector Emitter VoltageS(λ) - Relative Spectral Sensitivityrel1.00.80.60.40.20400 600 800 100094 8241λ -Wavelength (nm)Fig. 7 - Relative Spectral Sensitivity vs. WavelengthC CEO- Collector Emitter Capacitance (pF)20161294 824084f = 1 MHz00.1 1 10V CE- Collector Emitter Voltage (V)100Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter VoltageS rel- Relative Radiant Sensitivity0° 10° 20°30°40°1.00.90.80.750°60°70°80°0.6 0.4 0.2 094 8243Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacementϕ - Angular DisplacementRev. 1.8, 23-Aug-11 3 Document Number: 81516For technical questions, contact: detectortechsupport@vishay.comTHIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.comBPW17NVishay SemiconductorsPACKAGE DIMENSIONS in millimeters± 0.15R 1.65EC3.3 ± 0.15Chip position± 0.32.9± 0.11.55(2)1.8 ± 0.1± 0.529.8± 0.33.42.4Area not plane± 0.250.4+ 0.150.5+ 0.2- 0.12.54 nom.1.5technical drawingsaccording to DINspecifications6.544-5042.01-4Issue:1; 01.07.9696 12187Rev. 1.8, 23-Aug-11 4 Document Number: 81516For technical questions, contact: detectortechsupport@vishay.comTHIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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