TEOS thin film deposition - Nectec

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ConclusionThe silicon dioxide (TEOS) films havewafer uniformity about 1.0 %refractive index about 1.45absorption coefficient of 0.0deposition rate of 9.2 nm/minEtch rate (HF3%) of 66 nm/min
AcknowledgementsI would like to give my special thanks to TMEC TeamThai Microelectronics Center (TMEC)National Electronics and Computer Technology Center (NECTEC)National Science and Technology Development Agency (NSTDA)
Page 1 and 2: Characterization of LPCVD TEOS Thin
Page 3 and 4: THIN FILM DEPOSITION FOR BASIC ETCH
Page 5 and 6: Outline• Thin film technology•
Page 7 and 8: Type of Deposition MethodsPhysical
Page 9 and 10: Low Pressure CVD (LPCVD)Advantage-
Page 11 and 12: SVG LPCVD furnace THERMCO TMX2603at
Page 13 and 14: Outline• Thin film technology•
Page 15 and 16: Oxide (SiO2) Films Deposition- Sila
Page 17 and 18: ~0.5cm ~1cmUniformity (%) = [Standa
Page 20: Process C: C Wafer spacingTechnique
Page 23 and 24: Map TEOS filmELLIPSOMETERThin Film
Page 25 and 26: Properties of TEOS Films by LPCVDPr
Page 27: Outline• Thin film technology•

TEOS thin film deposition - Nectec

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