TEOS thin film deposition - Nectec

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Properties of Silicon Dioxide FilmsPropertyThermallyat 1000 CSiH4+4+O2at 450 CTEOSat 700 CSiCl2H2+2+N2Oat 900 CCompositionSiO 2SiO 2 (H)SIO 2SiO 2 (Cl)Density(g/cm3 )2.22.12.22.2Refractive index1.461.441.461.46Strength(106 V/cm)>1081010Etch rate (nm/min)(100:1 H2O:HF)3633Etch rate (nm/min)(buffered HF)441204545Step coverage-nonconformalconformalconformalFundamentals of Semiconductor Fabrication (page158)
Properties of TEOS Films by LPCVDPropertyTEOS at 705 CCompositionRefractive index (n)Absorption coefficient (k)Wafer uniformity (%)6 inch waferDeposition rate (nm/min)Etch rate (nm/min)HF3%Step coverageSiO 2~1.450.0000~1.09.266Conformal
Page 1 and 2: Characterization of LPCVD TEOS Thin
Page 3 and 4: THIN FILM DEPOSITION FOR BASIC ETCH
Page 5 and 6: Outline• Thin film technology•
Page 7 and 8: Type of Deposition MethodsPhysical
Page 9 and 10: Low Pressure CVD (LPCVD)Advantage-
Page 11 and 12: SVG LPCVD furnace THERMCO TMX2603at
Page 15 and 16: Oxide (SiO2) Films Deposition- Sila
Page 17 and 18: ~0.5cm ~1cmUniformity (%) = [Standa
Page 20: Process C: C Wafer spacingTechnique
Page 23: Map TEOS filmELLIPSOMETERThin Film
Page 29 and 30: AcknowledgementsI would like to giv

TEOS thin film deposition - Nectec

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