TEOS thin film deposition - Nectec

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Process A: A Different Operate PressureTechniqueTemperatureGas flow <strong>TEOS</strong>Operate PressureDeposit TimeWafer spacingLPCVD705 C80 SCCM150, 200, 250, 300 mtorr20 minuteNormalProcess B: B Different TemperatureTechniqueTemperatureGas flow <strong>TEOS</strong>Operate PressureDeposit TimeWafer spacingLPCVD680, 690, 700, 705, 710 C80 SCCM200 mtorr20 minuteNormal
Page 1 and 2: Characterization of LPCVD TEOS Thin
Page 3 and 4: THIN FILM DEPOSITION FOR BASIC ETCH
Page 5 and 6: Outline• Thin film technology•
Page 7 and 8: Type of Deposition MethodsPhysical
Page 9 and 10: Low Pressure CVD (LPCVD)Advantage-
Page 11 and 12: SVG LPCVD furnace THERMCO TMX2603at
Page 15 and 16: Oxide (SiO2) Films Deposition- Sila
Page 17: ~0.5cm ~1cmUniformity (%) = [Standa
Page 24 and 25: Properties of Silicon Dioxide Films
Page 26 and 27: TEOS Thin Film by LPCVD for Applica
Page 28 and 29: ConclusionThe silicon dioxide (TEOS
Page 30: Thank you for your attention

TEOS thin film deposition - Nectec

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