TEOS thin film deposition - Nectec

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Step in <strong>film</strong> growth- Gases are introduced into a reactionchamber- Gas species move to the substrate- Reactants are adsorbed on thesubstrate- Film-forming chemical reactions- Desorption and removal of gaseousby-products
Oxide (SiO2) Films Deposition- Silane & Oxygen (300-500C)SiH4 + O2- Tetraethylorthosilicate: <strong>TEOS</strong> (500-800C)Si(OCOC2H5)4700 C450 C SiO2+2H2 SiO2+ by-products- Dichlorosilane & Nitrous (~900C)900 CSiClCl2H2 + 2N2O SiO2+ 2N2 + 2HCl
Page 1 and 2: Characterization of LPCVD TEOS Thin
Page 3 and 4: THIN FILM DEPOSITION FOR BASIC ETCH
Page 5 and 6: Outline• Thin film technology•
Page 7 and 8: Type of Deposition MethodsPhysical
Page 9 and 10: Low Pressure CVD (LPCVD)Advantage-
Page 11 and 12: SVG LPCVD furnace THERMCO TMX2603at
Page 13: Outline• Thin film technology•
Page 17 and 18: ~0.5cm ~1cmUniformity (%) = [Standa
Page 20: Process C: C Wafer spacingTechnique
Page 23 and 24: Map TEOS filmELLIPSOMETERThin Film
Page 25 and 26: Properties of TEOS Films by LPCVDPr
Page 27 and 28: Outline• Thin film technology•
Page 29 and 30: AcknowledgementsI would like to giv

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