Development of infrared focal plane arrays for space - Astro Pas ...

FIG. 20. Read noise in a 2525 box at the center 128,128 of FPA CRC744-40716 vs temperature. The curves for N samp 1,8,32 were obtained in the Dewarwarming up process and the statistical uncertainty in each point is 0.04. The two N samp 64 data points were obtained when the dewar was stabilized at14.6 and 28.5 K and the statistical uncertainty in each point is 0.02.smaller than those displayed in Fig. 20 for similar conditions.Two factors may cause this difference:1 The data in Table VIII were acquired when temperaturewas stabilized, whereas the data in Fig. 20 were obtainedas the Dewar warmed up.2 When acquiring the data in Table VIII, after a parameter,e.g., the number of samples was changed, the same measurementswere performed four times, and the averagewas obtained. However, when acquiring the data in Fig.20, Fowler mode noise measurements with differentnumbers of samples were interspersed with SRP andR-G mode noise measurements, and Fowler mode QEmeasurement. It is a less stabilized situation and couldcontribute to a small increment in read noise.Recently, after fixing a small problem in our pre-ampboard, we achieved 5 e of read noise for CRC744-40716with 12 s integration time and 7 e for CRC744-41626 with200 s integration time at 15 K with 64 sample pairs.The FPA read noise of the Fowler sampling mode 3,4should be dominated by the voltage noise of V n of the sourcefollower metal-oxide-semiconductor field-effect transistorMOSFET in the unit cell. This can be calculated fromnC v0 V n2 f21cos2 f int 1 f / f 0 2sin 2 N f N 2 sin 2 f df,where n is the read noise in electrons, C v is the integratingnode capacitance in e /V, V n 2 /f is the power spectral densityof the source follower FET, N is the number of Fowlersample pairs, f 0 is the 3 dB cutoff frequency of thebandwidth-limiting RC filter, int is the integration time, and is the time between two successive sample pairs. Frommeasurements on various FETs using the same processingemployed for the CRC744, the FET noise power spectraldensity V 2 n / f can be estimated. Scaling to the size of theunit cell FETs at a temperature 14.5 K this becomes2V nV 2 /Hz, f 1.510 16 5.11012 f /Hz 0.77 with f 0 1 MHz/2 of the RC filter preceding our A/D converters.The second term, the flicker noise, is much moreimportant than the first term, the white, or thermal, noise.This noise prediction at 14.5 K is plotted in Fig. 19 in comparisonto the measured read noise from two CRC744 InSbFPAs.F. Power dissipationThe power dissipation at 400 mV bias and around 14.5K was measured with the FPA running in the following fourdifferent readout modes: flat-out with output amplifiers on,flat-out with output amplifiers off, park-mode with outputamplifiers on, and park-mode with output amplifiers off. Themeasurements are described as follows: fanout temperatureswere measured at ‘‘power off,’’ in which all voltages to allpins were set to zero, and in each of the above readout3576 Rev. Sci. Instrum., Vol. 68, No. 9, September 1997 IR focal plane arraysDownloaded 21 Jun 2012 to 128.151.144.191. Redistribution subject to AIP license or copyright; see http://rsi.aip.org/about/rights_and_permissions