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BUILDING ON THE PAST, READY FOR THE FUTURE: - MEMC

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Inner diameter saw with back grinding capability, which<br />

reduced the amount of required lapping.<br />

combined the superior flatness of the basic<br />

Czochralski wafer with an epitaxial layer grown<br />

on the polished surface. With the MultiStrate<br />

product line, substrate characteristics could<br />

STC horizontal saw, late 1970s.<br />

be matched to the epitaxial process using a<br />

Monsanto proprietary technique for engineering<br />

the epitaxial/substrate interface to enhance largescale<br />

circuit performance and yield.<br />

wafers are inserted into and extracted from a warming oven, slowly allowing them to heat or cool to avoid dislocations in the<br />

crystal lattice.<br />

A Second Generation of Technology 35

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