BFG94 NPN 6 GHz wideband transistor - NXP.com

NXP SemiconductorsProduct specificationNPN 6 GHz wideband transistorBFG94CHARACTERISTICST j = 25 C unless otherwise specified.SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITI CBO collector cut-off current I E = 0; V CB = 10 V 100 nAh FE DC current gain I C = 30 mA; V CE = 5 V 45 90 I C = 45 mA; V CE = 10 V 100 C c collector capacitance I E = i e = 0; V CB = 10 V; f = 1 MHz 0.9 2 pFC e emitter capacitance I C = i e = 0; V EB = 0.5 V; f = 1 MHz 2.9 4.5 pFC re feedback capacitance I C = i c = 0; V CE = 10 V; f = 1 MHz 0.5 0.8 pFf T transition frequency I C = 45 mA; V CE = 10 V; f = 1 GHz; 4 GHzT amb = 25 CI C = 30 mA; V CE = 5 V; f = 1 GHz; 4 6 GHzT amb = 25 CG UM maximum unilateral power gain I C = 45 mA; V CE = 10 V; f = 1 GHz; 11.5 13.5 dB(note1)T amb = 25 CF minimum noise figure s = opt ; I C = 45 mA; V CE = 10 V; 2.7 dBf = 500 MHz s = opt ; I C = 45 mA; V CE = 10 V; 3 dBf = 1 GHzV O output voltage note 2 500 mVd 2 second order intermodulationdistortionnote 3 51 dBP L1output power at 1 dB gaincompressionI C = 45 mA; V CE = 10 V; R L = 50 ;T amb = 25 C; measured at f = 1 GHzNotes1. G UM is the maximum unilateral power gain, assuming S 12 is zero and2. d im = 60 dB (DIN 45004B, par 6.3: 3-tone); I C = 45 mA; V CE = 10 V; R L = 75 ; T amb = 25 C;V p = V O at d im = 60 dB; f p = 795.25 MHz;V q = V O 6 dB; V r = V O 6 dB;f q = 803.25 MHz; f r = 805.25 MHz;measured at f (p+qr) = 793.25 MHz.3. I C = 45 mA; V CE = 10 V; R L = 75 ; T amb = 25 C;V q = V O = 280 mV;f p = 250 MHz; f q = 560 MHz;measured at f (p+q) = 810 MHz.4. I C = 45 mA; V CE = 10 V; R L = 50 ; T amb = 25 C;f p = 1000 MHz; f q = 1001 MHz;measured at f (2pq) and f (2qp ). 21.5 dBmITO third order intercept point note 4 34 dBmS 212G UM = 10 log---------------------------------------------------------dB.221 – S 11 1 – S 22 September 1995 4