SS8550 PNP Epitaxial Silicon Transistor

SS8550SS85502W Output Amplifier of Portable Radios inClass B Push-pull Operation.• Complimentary to SS8050• Collector Current: I C =1.5A• Collector Power Dissipation: P C =2W (T C =25°C)1TO-921. Emitter 2. Base 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings T a =25°C unless otherwise notedSymbol Parameter Ratings UnitsV CBO Collector-Base Voltage -40 VV CEO Collector-Emitter Voltage -25 VV EBO Emitter-Base Voltage -6 VI C Collector Current -1.5 AP C Collector Power Dissipation 1 WT J Junction Temperature 150 °CT STG Storage Temperature -65 ~ 150 °CElectrical Characteristics T a =25°C unless otherwise notedSymbol Parameter Test Condition Min. Typ. Max. UnitsBV CBO Collector-Base Breakdown Voltage I C = -100µA, I E =0 -40 VBV CEO Collector-Emitter Breakdown Voltage I C = -2mA, I B =0 -25 VBV EBO Emitter-Base Breakdown Voltage I E = -100µA, I C =0 -6 VI CBO Collector Cut-off Current V CB = -35V, I E =0 -100 nAI EBO Emitter Cut-off Current V EB = -6V, I C =0 -100 nAh FE1 DC Current Gain V CE = -1V, I C = -5mAh FE3 V CE = -1V, I C = -800mAh FE2V CE = -1V, I C = -100mAV CE (sat) Collector-Emitter Saturation Voltage I C = -800mA, I B = -80mA -0.28 -0.5 VV BE (sat) Base-Emitter Saturation Voltage I C = -800mA, I B = -80mA -0.98 -1.2 VV BE (on) Base-Emitter on Voltage V CE = -1V, I C = -10mA -0.66 -1.0 VC ob Output Capacitance V CB = -10V, I E =015 pFf=1MHzf T Current Gain Bandwidth Product V CE = -10V, I C = -50mA 100 200 MHzh FE ClassificationClassification B C Dh FE2 85 ~ 160 120 ~ 200 160 ~ 30045854017016080300©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

Typical CharacteristicsSS8550-0.5IB=-4.0mA1000VCE = -1VIC[mA], COLLECTOR CURRENT-0.4-0.3-0.2-0.1IB=-3.5mAIB=-3.0mAIB=-2.5mAIB=-2.0mAIB=-1.5mAIB=-1.0mAIB=-0.5mAhFE, DC CURRENT GAIN10010-0.4 -0.8 -1.2 -1.6 -2.01-0.1 -1 -10 -100 -1000VCE[V], COLLECTOR-EMITTER VOLTAGEIC[mA], COLLECTOR CURRENTFigure 1. Static CharacteristicFigure 2. DC current GainVBE(sat), VCE(sat)[V], SATURATION VOLTAGE-10000-1000-100VBE(sat)VCE(sat)IC=10IB-10-0.1 -1 -10 -100 -1000IC[mA], COLLECTOR CURRENT-100-10-1VCE = -1V-0.1-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2IC[mA], COLLECTOR CURRENTVBE[V], BASE-EMITTER VOLTAGEFigure 3. Base-Emitter Saturation VoltageCollector-Emitter Saturation VoltageFigure 4. Base-Emitter On VoltageCob[pF], CAPACITANCE10010f=1MHzIE=01-1 -10 -100 -1000fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT1000100VCE=-10V10-1 -10 -100 -1000VCB[V], COLLECTOR-BASE VOLTAGEIC[mA], COLLECTOR CURRENTFigure 5. Collector Output CapacitanceFigure 6. Current Gain Bandwidth Product©2002 Fairchild Semiconductor CorporationRev. A2, November 2002

Package DimensionsSS8550TO-924.58 +0.25–0.153.86MAX0.46 ±0.101.27TYP[1.27 ±0.20]1.02 ±0.100.38 +0.10–0.051.27TYP[1.27 ±0.20]3.60 ±0.20(R2.29)(0.25) 14.47 ±0.404.58 ±0.200.38 +0.10–0.05Dimensions in Millimeters©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

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