ASM Sci. J., 7(1), 18–22Electron-phonon Coupling Constants of TwodimensionalCopper Oxide-basedHigh Temperature SuperconductorsR. Abd-Shukor 1 * and W.Y. Lim 1The electron-phonon coupling constant of the copper oxide-based high temperature superconductors in thevan Hove scenario was calculated using three known models and by employing various acoustic data. Threeexpressions for the transition temperature from the models were used to calculate the constants. All threemodels assumed a logarithmic singularity in the density of states near the Fermi surface. The calculatedelectron-phonon coupling constant ranged from 0.06 to 0.28. The constants increased with the transitiontemperature indicating a strong correlation between electron-phonon coupling and superconductivity in thesematerials. These values were smaller than the values estimated for the conventional three-dimensional BCStheory. The results were compared with previous reports on direct measurements of electron-phonon couplingconstants in the copper oxide based superconductors.Key words: Acoustic methods; electron-phonon coupling constant; van Hove scenario; transition temperaturemodelsThe understanding of the mechanism of superconductivityin the cuprates has been one of the major challenges incondensed matter physics since the discovery of this classof superconductors many years ago. Several models havebeen proposed throughout the years. Basically there aretwo opposing views on the possible mechanism. The firstidea is based on the electron-phonon interaction and theother is based on the one-band Hubbard Hamiltonian. Theelectron-phonon interaction in the cuprates is said to be tooweak to produce a high T c . On the other hand, it is not easy toexplain the thermodynamic properties of the cuprates withpositive potential of the Hubbard model. A combination ofboth ideas to explain high T c superconductivity has beenreported recently (Szczesniak et al. 2012).Although the possible role of phonons in the cuprateshas been abandoned earlier on, the important role ofphonons in the pairing mechanism in the materials has Modelsregained attention in the past few years following a numberof experimental and theoretical evidences (Lanzara et al.2001; Reznik et al. 2006; Shimada et al. 2002). By takinginto consideration the singularity in the density of statesat the Fermi level for a two-dimensional system, recentworks have shown that such a model can be viable for high N Etemperature superconductivity (Newns et al. 1995).* Corresponding author (e-mail: ras@ukm.my)18A large effect can be produced near the van Hovesingularity even for arbitrarily weak interactions(Vozmediano et al. 2002). Hence in principle, a very smallelectron-phonon coupling is sufficient for the formation ofthe Cooper pairs. It is interesting to determine the value ofthe electron-phonon coupling constant in the cuprate. In aprevious paper we reported the electron-phonon couplingconstant in the cuprates for the van Hove scenario (Abd-Shukor 2007). In this paper we calculated the electronphononcoupling constant for the van Hove scenario derivedfrom three expression of the transition temperature (Getinoet al. 1993; Newns et al. 1992; Tsuei et al. 1990) and byusing parameters determined from acoustic methods. Theelectron-phonon coupling constants were then comparedto experimental results of direct measurements of theelectron-phonon coupling constant.The density of states at the Fermi level in the van Hovescenario is given as:( ) = N olnE FE E Ftanh E E F= E E F2k BT c2k BT c, (1)1 School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan <strong>Malaysia</strong>, 43600 Bangi, Selangor, <strong>Malaysia</strong>tanh E E F=12k BT cT c = 1.36(10 D )exp 2NoV + ln k B(10 D )k2112
V VH1 = 2k N F D o V ( E = E F ) + 2 ( T )2k T BT c FFtanh = 22k T B cln c +1 ln( 10) 2BT c2k BT ctanh E E F=1213.6 DVH1 = N o V = 2k 2BT c 1212T c = 1 2 T F exp 1NR. Abd-Shukor and W.Y. Lim: Electron-phonon Coupling Constants of Copper Oxide-based 0 V + D D , T TT Fln c2coth D+1+ ln 2 ln( T10F ) 2c = 1.36(10 D )exp 2NoV + ln k 2 2V =E F + D dE( E ENE F D( E) F ) 2 + 2 ( T )tanhB(10 D )( E E F ) 2 + 2 ( T )1tanh E 2k E BT cF=1k B 13.6 D D22T c 2TSuperconductorsc 2T F DV =E F + D2k dE( E ENE F D( E) F ) 2 + 2 BT c ( T )T tanhE( E E F ) 2 + 2 ( T ) c = 1.36(10 D 2k )exp 212BT c NoVN ( E) = N oln FE 2where, N ( EN ) o= is Na o constant ln E FEand F E F is the Fermi energy.NEEE( ) = FEN oln FModel 1. Using the BCS Eexpression EVH 2 = N 0 V =V =E F + D dEVH1 = N o V = 21T c = 1 NE ln2 2TF D( E) tanh2T c = 1.36(10 c ln 2 ( E E10) 2coth D D D , T F ) 2 + 2 T12F for energy gapT F 2T c 2T c T c = 1 D T c )exp 2+1( )Ewith the above density of states (Equation 1), and thetanh E E F= E E 2 T 1F expNFNtanh E 2k E BTFc = E 2k E oln F0 V + D D , T NoV ln( + 10) ln k 2 22 T 1F expN 0 V + D D , T F 2coth D + ln 2 T F2T c 2T c 2T F DB(10 2 D )1k13.6 B D D F 2coth D + ln 2 TVH1 = N o V = 2 F22T c 2T c 2T F Tln c D, (6)approximations tanh EBTFE F= E E 1E E Fc2k BT c2k BT cFfor |E – E F |≤ 2k B 2 T c 1c T2k BT c2k BTc 1.36T Fexp + ln D 22 T 1F exp1 N 0 V + D D , T 13.6F22coth2T c 2T ccV =E F + D dE( E ENE F D( E) F ) 2 VH1 = N o V = 2DVH 2 = N 0V = ln 2 2T c ln 2 ( 10) 2coth D D D , T 1FT + 2F 2T c 2T c 2T c( T )2( E E Eand tanh E E F ) 2 + 2 TtanhlnFE F=1 for |E – E F |≤ 2k B T c , the transition Model 3. For the third model, Newns et al. (1992)= E E tanh E 2k E VH 2 = N 0 V = ln2 2T( T ) c +1 ln( 10) 2k 2BT cc 13.6ln 2 ( 10 D 2 ) 2coth D D D , TFBTFTc =1BT derived the transition temperature:tanh E E c2k BT E F V =E F +1D dE2c N ( E) = N2k oln BT Fc F=1[ fVE Etemperature can be written FE * = e/ Z e ] 2E F D2T c 2T c 2TT ( E EE2k B as T c (Tsuei et al. 1990):D VH 2 = N 0V = ln 2 2T c ln 2 F ) 2 + 2 c= 1.36T Fexp + ln2 D 21( T ) 1E10) 2co 21N ( E) = N oln FT c = 1 1 T F, (7)T c = 1.36(10 D )exp 21NoV + ln k 2 2 2 T 2 1F expN1 2 0 V + D D , T F 2coth D + ln 2 T E E EFFB(10 D )1T c = 1.36(10 D )exp 2 k B T c = 1.36(10 D )exp 2NoV + ln k 2 2NoV + ln k 2 2 T c= 1.36T Fexp + ln2 DV =E F + D dE( E E2T c 2TNE F Dc( E) F ) 2 +2Ttanh F D( E E F ) 2 + 12 ( T )2k BT c1=1B(10 D )k BT c1tanh E E F= E E [ fVFk B D B(10 D )1= 2 T EcVH 3 ln2ln 2 D T+1 c = 1 12k BT c2k BT13.6 DE * 2 T F exp 1E * =E cTk B D by employing the conventional BCS expression togethertanh E E F= E E c= 1.36T Fexp + ln2 D N 0 V + D De/ Z e ] 2D2 2T1FF1E Fwith density of states as in (Equation 1) and using theVH1 = N o V = 2exchange of excitations with a characteristic low electronic6(10 D )exp 2, (2)VH1 = N o V = 2NoV + ln k 2 2[ fV2k BTB(10 c2k D B ) T cE * = e/ Z e ] 2EVH 2 = N 0V = ln 2 2T c ln 2 ( 10) 2coth DT D , T c = 11tanh E E EN ( E) = N Fk B D Tln cenergy scale E* given aswhere f is theVH1 = N o V = 2 +1 ln( 10) 2oln FT c= 2.72T FeD1 2 T 1F expT F N 0 V + D D , T 1F 2coth D + ln 2= 2 T c2T c 2T c2T c 2T 2T c 2VH 3 ln2ln 2 D+1F13.6=1DE *2kln 13.6T c D +1 ln( 102) 2BT E EcF[ fVE * = e/ Z e ] 2VH 2 = N 0 V = ln2 2T c lE E Ftanh E E F=1 13.6 D Tln c +1 ln( 10) 22k fraction of the Brillouin zone occupied by the van HoveBT 2k BT 13.6 F E2 T cVH 3F ln2cE c D 1where, 2 θ D is the Debye temperature = T F /10, N o V = singularity,kZ e is 13.6 ln 2 11TDF2T+1* c= 1.36T Fexp + ln2 D 2T 1c= 2.72T Fe 1the electronic D factor, D is the slave boson= N o V =λ VH1 2and T is the Fermi temperature. From (Equation propagator, V e is the electron coupling and ξ is a constant.2), the V =E F + D dE( E EN electron-phonon F( )F ) 2 + 2 ( T )T 2tanhcoupling constant can be written By using (Equation 7) and E* = 0.44D at E = 0 (Maximalas:2( E Etransition temperature), D = 1.6 eV, the electron-phononV =F + D dE( EN EE F D( )F ) 2 + 2 F ) 2 + 2 ( )2k BT cV =E F + D dE( E EN E F D( )F ) 2 ln cT c = 1.36(10+1 ln( 10 D )exp 2) 2NoV + ln k 2 2tanh E E F= E E B E1F VH 2 = N 0V = ln 2 2T c ln 2 ( 10) 2coth D DFE B(10 D )2k 1k + 2 BT c2k BT ( TB)= 2 T F T cFc13.6 tanh D1D ( T )T ( E E F ) 2 + 2 ( T )2ktanh BT c = 1.36(10 D )exp 2cNoV E Ecoupling constant could be written as:( + F ) ln k 2 2 T1B(10 D )c= 2.72T Fe 1VH 3 ln2ln 2 D+1 2 2T c13.6T c= 1.36T FexpDE * + ln2 DT E[ fV1 E * = e/ Z e ] 2F= E Fk B12+k 2 B ( T ) D 2k BT ctanh E E D2E E FF12+ dE, (3)T c = 1 12 T E1EF exp, (8)2T c = 1 N 0 V + D D , F 2coth D + ln 2 1 DVH1 (NT F 2c = 1 ( = EN o) V F ) 2 + 2 ( T )tanh= =12k2BT T2k 122T c 2T2 T F exp 1 cN 0 V + D D , T 2T F D2 T 1T F expN 0 V + D D , T F 2coth D + ln 2 TD( E E FF ) 2 2 ( T )ln c 2k BT c+1 ln( 10) 2)exp 2VH1 = N o V = 2NoV + ln k BT F= E TTFc= 2.72T Fe 1c= 1.36T Fexp + ln2 D 21[ fVcEc2 2k * 1=e/ Z e ] 2BB(10 D )1= 2 T cVH 3 ln2lnk B D13.6 D 2T 2 c 2T c 2T F F 2coth D+ ln 2 T F TTln c +1 ln( 2T ) 21 F= E 2 DD+113.6 FDE[ fV *c 2T c 2T F DModel T c = 1.36(10 2. In another D )expscenario 13.6 D2Getino et 1 al. (1993) used In previous papers the electron-phonon coupling in a2the energy gap equation:two-dimensional system where the van Hove scenario isVH 2 = N 0V = ln 2 2T c ln 2 ( 10) 2coth D Dapplicable D , T 1Fhave been reported (Abd-Shukor 2002; Abd-T F 2T c Shukor2T c 2T2007; c Getino et al. 1993; Newns et al. 1992; TsueiVH 2 = N 0V = ln 2 2T c ln 2 ( 10) 2coth DTet al. 1990). D In D the , T 1VH 2 = N 0V = ln 2 2T c ln 2 ( 10) 2coth D D D , T 1F exp 1N 0 V + D 2 D , T NoV + ln k 2 2 E * = e/ Z e ] 2k B=1B(10 D )D1= 2 T ck B DF 2coth D + ln 2 T FV =E F + D dE( E EN E2TEcF 2T D( )F ) 2 2+ 2 ( T )T c= 2.72T Fe 1VH 3 ln2ln 2 D13.6 DE1tanh2c E E 2T F DF( F ) 2 + 2 ( T )2k BTT cln c +1 2ln T F 2T c 2T c 2T c Fweak coupling limit (λ « 1), T c can beV = ( E) 21F +dE( E EN EE F D( )F ) 2 + 2 ( T ))exp 13.6 2 DtanhVH1 = N o V E E F 2T( = 2NoV + ln k 2= 2 T c2B(10 D )1Tk B D c 2T c 2TF ) 2 F= E VH 3 ln2ln 2 D+113.6 D T E *Fc= 2.72T Fe 1+ 2 ( T )2k BT2c k B c1T 12T written as where, (EF is thec= 1.36T Fexpln2 D 122 1E1T c= 1.36T Fexpln2 2N 0 V = ln 2 2T c ln 2 ( 10) 2coth 1D , T 12T c = 1 ln c +1FT F2 T F exp 1 13.6N 0 V 2T + D D , T ln( 10) 2F 2coth D + ln 2 T FTdE2 Fermi energy) Getino et al. 1992). In this paper theT c= 1.36T c2TFexp , + ln2 D 2E c 2T c 2T c2T 1F D1 (4)2T c = 1 Echaracteristic ratio of T F /θ D was given as 10 in the high T c2 T 1F expfVmaterials. In the high T c material, for example the La-Sr-Ca-[E * = e/ Z e ] 2 N 0 V + D D , T F 2coth D + ln 2 TE FF ) 2 + 2 ( T ) N ( E ( E E)F ) 2 D c= 2.72T Fe 1T F= E F+ 2 ( Tk)B2 tanh=22k BT cTln c +1 2 ln 2T c 2T c 2T F D12 Cu-O system, Tand the density [ fV of states as in (Equation 1) and showed thatF /θ D ranged from 7.4–13.9 and in the Y-Ba-E * = e/ ZD e ] 26T Cu-O system Tthe transition temperature D [ fVcould be written as:F /θ D can be as close to 11.7 (Krunacakarn etE * = e/ Z e ] Fexp + ln2V D= ( 10 E F ) 2+ D dE( E EN EE F 2 D( )F ) 2 + 2 T( T )F= E Fk13.6 D tanhB1VH E 2 = N 0 V = ln2 2T c ln 2 ( 10) 2coth D D D , T 1( E E F ) 2 + 2 ( T1 2)2k BT cF1T F 2TDal. 1998). The ratio of T F /θ D = 10 was in the correct order1 c 2T c 2T c 2 T cof magnitude. θ D values were obtained from our acousticVH 3 ln2ln 2 D 1VH 2 = N +1= 2 0 V = T ln2 2T c ln 2 ( 10) 2coth D D13.6 c1 experiments (Yahya et al. 1999).DE * VH 3 ln2ln 2 D , T 1N 0 V + D D , T F 2coth D + ln 2 T FdE 2T c 2T c 2T F D1 FfV e/ Z e ] 2T F +12T213.6 = 2 2 DTE * 1c 2T c 2TE cT c = 1 2 T 1F expN VH 3 ln2ln 2 DDT+113.6 DE * c= 1.36T Fexp 0 V + D D , T F 2coth D + ln 2 TF ) 2 + 2 ( T ) N ( E ( E E)F ) 2 + 2 ( T )tanh2k BT cF+ ln2 D2T c 2T12 c 2T F DEXPERIMENTAL DETAILSc 2.72T Fe 1 E11Tc 2.72T e 1 2ln 2c= 1.36Tcln 2 D Fexp + ln2 D 2ln 2 2T c ln 2 ( 10) 2coth D D D , T 11F21 T 1F 2T c 2T+1, (5)T c= 2.72T Fe 1 c 2TE cSamples (about 12.5 mm diameter and 2 mm thickness)13.6 DE * [ fVE * T=were prepared via solid-state reaction method using highpurityc 2TF= E e/ Z e ] 2VH 2 F1T F= E = N 0 V = ln2 2T c ln 2 ( 10) 2coth D D D , T 1N 0 V + D D , T F 2coth D + ln 2 T F2T c 2T c 2T F DFkFD T F 2T c 2T2 B(>99.9%) c metal oxides and carbonates by sinteringk[ fVin air at various temperatures followed by annealing inFrom (Equation 5), T F the = E BFT electron-phonon coupling constantFe 1E * = e/ Z e ] 2+ ln2 D 21ED1k oxygen and various gases.could be 2 written as: T B cVH 3 ln2ln 2 1ln 2 2T c ln 2 102 +1T 13.6 D * c= 1.36T Fexp + ln2 D 2( ) 2coth D D D , T 1FT F 2T c 2T c 2T 11] 2= 2 T E ccVH 3 ln2ln 2 D+113.619T c= 2.72T Fe 1DE *12 [ fVE 1* = e/ Z e ] 2+ ln2 D 21T ET c= 2.72T Fe 1c ln2 D D+1
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