TFDU6103 Datasheet - Vishay

TFDU6103 Datasheet - Vishay TFDU6103 Datasheet - Vishay

12.07.2015 Views

www.vishay.comNot for New DesignsTFDU6103Vishay SemiconductorsELECTRICAL CHARACTERISTICS (1)PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITShutdown supply currentSD = highT = 25 °C, not ambient lightsensitive, detector is disabled inshutdown modeI SD 0.01 μASD = high, full specifiedtemperature range, not ambient I SD 1 μAlight sensitiveOperating temperature range T A - 25 + 85 °CInput voltage low(TXD, SD)V IL - 0.5 0.5 VTRANSCEIVERInput voltage high(TXD, SD)CMOS level (2) V IH V CC - 0.3 6 VInput leakage current(TXD, SD)V IN = 0.9 x V CC1 I ICH - 1 + 1 μAInput capacitance, TXD, SD C I 5 pFOutput voltage low I OL = 500 μA, C load = 15 pF V OL 0.4 VOutput voltage high I OH = 250 μA, C load = 15 pF V OH 0.9 x V CC1 VOutput RXD current limitationhigh statelow stateShort to groundShort to V CC12020SD shutdown pulse duration Activating shutdown 30 μsRXD to V CC1 impedance R RXD 400 500 600 kSD mode programming pulseAll modes tdurationSDPW 200 nsNote(1) T amb = 25 °C, V CC1 = V CC2 = 2.4 V to 5.5 V unless otherwise noted.Typical values are for design aid only, not guaranteed nor subject to production testing.(2) The typical threshold level is 0.5 x V CC1 (V CC1 = 3 V). It is recommended to use the specified min./max. values to avoid increased operatingcurrent.OPTOELECTRONIC CHARACTERISTICS (1)PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITRECEIVERMinimum irradiance E e inangular range (3) SIR modeMinimum irradiance E e inangular range, MIR modeMinimum irradiance E einangular range, FIR mode9.6 kbit/s to 115.2 kbit/s = 850 nm to 900 nm1.152 Mbit/s = 850 nm to 900 nm4 Mbit/s = 850 nm to 900 nmE e25(2.5)E e65(6.5)E e80(8)Maximum irradiance E e inangular range (4) = 850 nm to 900 nm E e5(500)Maximum no detectionirradiance(2) E e4(0.4)35(3.5)90(9)mAmAmW/m 2(μW/cm 2 )mW/m 2(μW/cm 2 )mW/m 2(μW/cm 2 )kW/m 2(mW/cm 2 )mW/m 2(μW/cm 2 )Rise time of output signal 10 % to 90 %, 15 pF t r (RXD) 10 40 nsFall time of output signal 90 % to 10 %, 15 pF t f (RXD) 10 40 nsRXD pulse width of outputsignal, 50 %, SIR modeRXD pulse width of outputsignal, 50 %, MIR modeInput pulse length, 1.4 μs < P Wopt < 25 μs t PW 2.1 μsInput pulse length, 1.4 μs < P Wopt < 25 μs,- 25 °C < T < 85 °C (5) t PW 1.5 1.8 2.6 μsInput pulse length, P Wopt = 217 ns,1.152 Mbit/st PW 110 250 270 nsRev. 1.5, 06-Sep-13 4 Document Number: 81211For technical questions, contact: irdasupportAM@vishay.comTHIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.comNot for New DesignsTFDU6103Vishay SemiconductorsOPTOELECTRONIC CHARACTERISTICS (1)PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITRXD pulse width of outputsignal, 50 %, FIR modeStochastic jitter, leading edgeInput pulse length, P Wopt = 125 ns,4 Mbit/sInput pulse length, P Wopt = 250 ns,4 Mbit/st PW 100 140 nst PW 225 275 nsInput irradiance = 100 mW/m 2 , 4 Mbit/s 20 nsInput irradiance = 100 mW/m 2 , 1.152 Mbit/s 40 nsInput irradiance = 100 mW/m 2 , 576 kbit/s 80 nsInput irradiance = 100 mW/m 2 , 115.2 kbit/s 350 nsAfter completion of shutdown programmingReceiver start up time250 μssequence power on delayLatency t L 40 100 μsTRANSMITTERIRED operating current,switched current limiterNote: no external current limiting resistor isneeded forV CC1 = V CC2 = 3.3 VI D 330 440 600 mAInput pulse width t < 20 μs t pw t μsOutput pulse width limitation Input pulse width 20 μs < t < 150 μs t pw 18 150 μsInput pulse width t 150 μs t pw_lim 150 μsOutput leakage IRED current I IRED - 1 1 μAOutput radiant intensity,see figure 1, recommendedapplication circuitOutput radiant intensity,see figure 1, recommendedapplication circuitV CC = V IRED = 3.3 V, = 0°TXD = high, SD = low, R1 = 1 V CC = V IRED = 3.3 V, = 0°, 15°TXD = high, SD = low, R1 = 1 I e 110 170 468 (6) mW/srI e 100 130 468 (6) mW/srOutput radiant intensityV CC1 = 3.3 V, = 0°, 15°TXD = low or SD = high (receiver is inactive as long I e 0.04 mW/sras SD = high)Output radiant intensity, angleof half intensitya ± 24 degPeak - emission wavelength (7) p 875 886 900 nmSpectral bandwidth Dl 45 nmOptical rise time,Optical fall timet ropt ,t fopt10 40 nsInput pulse width 217 ns, 1.152 Mbit/s t opt 207 217 227 nsOptical output pulse durationInput pulse width 125 ns, 4 Mbit/s t opt 117 125 133 nsInput pulse width 250 ns, 4 Mbit/s t opt 242 250 258 nsOptical overshoot 25 %Notes(3) T amb = 25 °C, V CC = 2.4 V to 5.5 V unless otherwise noted. All timing data measured with 4 Mbit/s are measured using the IrDA FIRtransmission header. The data given here are valid 5 μs after starting the preamble.Typical values are for design aid only, not guaranteed nor subject to production testing.(4) This parameter reflects the backlight test of the IrDA physical layer specification to guarantee immunity against light from fluorescent lamps.(5) IrDA sensitivity definition: minimum irradiance E e in angular range, power per unit area. The receiver must meet the BER specification whilethe source is operating at the minimum intensity in angular range into the minimum half-angular range at the maximum link length.(6) Maximum irradiance E e in angular range, power per unit area. The optical delivered to the detector by a source operating at the maximumintensity in angular range at minimum link length must not cause receiver overdrive distortion and possible related link errors. If placed atthe active output interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specification. For moredefinitions see the document “Symbols and Terminology” on the Vishay website(7) Retriggering once during applied optical pulse may occur.(8) Maximum value is given by eye safety class 1, IEC 60825-1, simplified method.(9) Due to this wavelength restriction compared to the IrDA spec of 850 nm to 900 nm the transmitter is able to operate as source for thestandard remote control applications with codes as e.g. Philips RC5/RC6 ® or RECS 80. When operated under IrDA full range conditions(125 mW/sr) the RC range to be covered is in the range from 8 m to 12 m, provided that state of the art remote control receivers are used.Rev. 1.5, 06-Sep-13 5 Document Number: 81211For technical questions, contact: irdasupportAM@vishay.comTHIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.comNot for New Designs<strong>TFDU6103</strong><strong>Vishay</strong> SemiconductorsELECTRICAL CHARACTERISTICS (1)PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITShutdown supply currentSD = highT = 25 °C, not ambient lightsensitive, detector is disabled inshutdown modeI SD 0.01 μASD = high, full specifiedtemperature range, not ambient I SD 1 μAlight sensitiveOperating temperature range T A - 25 + 85 °CInput voltage low(TXD, SD)V IL - 0.5 0.5 VTRANSCEIVERInput voltage high(TXD, SD)CMOS level (2) V IH V CC - 0.3 6 VInput leakage current(TXD, SD)V IN = 0.9 x V CC1 I ICH - 1 + 1 μAInput capacitance, TXD, SD C I 5 pFOutput voltage low I OL = 500 μA, C load = 15 pF V OL 0.4 VOutput voltage high I OH = 250 μA, C load = 15 pF V OH 0.9 x V CC1 VOutput RXD current limitationhigh statelow stateShort to groundShort to V CC12020SD shutdown pulse duration Activating shutdown 30 μsRXD to V CC1 impedance R RXD 400 500 600 kSD mode programming pulseAll modes tdurationSDPW 200 nsNote(1) T amb = 25 °C, V CC1 = V CC2 = 2.4 V to 5.5 V unless otherwise noted.Typical values are for design aid only, not guaranteed nor subject to production testing.(2) The typical threshold level is 0.5 x V CC1 (V CC1 = 3 V). It is recommended to use the specified min./max. values to avoid increased operatingcurrent.OPTOELECTRONIC CHARACTERISTICS (1)PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITRECEIVERMinimum irradiance E e inangular range (3) SIR modeMinimum irradiance E e inangular range, MIR modeMinimum irradiance E einangular range, FIR mode9.6 kbit/s to 115.2 kbit/s = 850 nm to 900 nm1.152 Mbit/s = 850 nm to 900 nm4 Mbit/s = 850 nm to 900 nmE e25(2.5)E e65(6.5)E e80(8)Maximum irradiance E e inangular range (4) = 850 nm to 900 nm E e5(500)Maximum no detectionirradiance(2) E e4(0.4)35(3.5)90(9)mAmAmW/m 2(μW/cm 2 )mW/m 2(μW/cm 2 )mW/m 2(μW/cm 2 )kW/m 2(mW/cm 2 )mW/m 2(μW/cm 2 )Rise time of output signal 10 % to 90 %, 15 pF t r (RXD) 10 40 nsFall time of output signal 90 % to 10 %, 15 pF t f (RXD) 10 40 nsRXD pulse width of outputsignal, 50 %, SIR modeRXD pulse width of outputsignal, 50 %, MIR modeInput pulse length, 1.4 μs < P Wopt < 25 μs t PW 2.1 μsInput pulse length, 1.4 μs < P Wopt < 25 μs,- 25 °C < T < 85 °C (5) t PW 1.5 1.8 2.6 μsInput pulse length, P Wopt = 217 ns,1.152 Mbit/st PW 110 250 270 nsRev. 1.5, 06-Sep-13 4 Document Number: 81211For technical questions, contact: irdasupportAM@vishay.comTHIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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