Hitachi Chemical Metal CMP Slurry and Low-K Material
Hitachi Chemical Metal CMP Slurry and Low-K Material
Hitachi Chemical Metal CMP Slurry and Low-K Material
- No tags were found...
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
Delaminationdelamination
Why delamination happens ?1 <strong>Low</strong> mechanical strength of <strong>Low</strong> k material2 Poor adhesion between <strong>Low</strong> k <strong>and</strong> CVD3 High down force Cu polishing321PadCVD<strong>Low</strong> k<strong>Slurry</strong>CuBarrier <strong>Metal</strong>
<strong>Hitachi</strong> <strong>Chemical</strong> Cu / <strong>Low</strong>-kIntegration Process SolutionCu-<strong>CMP</strong> slurry• <strong>Low</strong> down forcepolishing<strong>Low</strong>-k material• High mechanicalstrength
Polishing ModelDown ForceDown ForcePadReaction layerAbrasivePadCuO(Cu2O)CuCuAbrasive FreePolishing pad shear forceConventionalAbrasive powder
Advantages of AFPItem Conventional Abrasive Free MeritMicroScratchParticleResidueSiO Loss 2DishingErosionIncreasein YieldIncrease inReliabilityDesignedResistivityDesignedResistivityDesignedResistivity
Young's modulus (GPa)8765Influence of Young’s modulus on Cu-<strong>CMP</strong><strong>CMP</strong> passed (Blanket wafer)OK !HSG-7000HSG-80004×3××2× ×1Delamination<strong>CMP</strong> failed01.5 2 2.5 3 3.5Dielectric constantRequirements for low k1) Bulk k : < 2.22) Modulus : > 4GPa3) Good Adhesion to CVD(Selection of CVD film)SOGCap CVDCohesive fractureSOGCross Sectional SEMCourtesy of <strong>Hitachi</strong> CentralResearch Laboratory
Concepts of HSG-7000HSG-7000RSi OnR: organic groupSpin-on DielectricSiloxane PolymerPorous <strong>Material</strong>k < 2.2<strong>Material</strong> Design Concepts・ Process Compatibility・ <strong>Low</strong> Organic Content・ <strong>Low</strong> Pore Volume・ Narrow Pore SizeDistributionGood Process Compatibility・ High Mechanical Strength・ Cu-<strong>CMP</strong> Resistivity
Film Properties of HSG series 1)PropertyHSG-7000HSG-R7MethodologyTypePorousNon-Porous—Dielectric constant2.22.8 CV@1MHzYoung’s modulus[GPa]4.34.4Nano-indentation2)Weight loss [%]< 1< 1Isothermal TGA,425ºC, 2hOut-gassing(relative value)0.61TDSCrack Threshold(mm)> 2.51.5—1) Cure conditions : 400 ºC / 30min under N2 atmosphere2) Nano-indenter DCM by MTS
Cu-<strong>CMP</strong> Process— Combination of HSG-7000 with HS-C500-X —• <strong>Slurry</strong> :HS-C500-X• Polisher :Conventional Rotary type Polisher• Structure (Blanket wafer)CuHSG-7000 (300nm)SiBarrier metalCap layerConventional (E = 2.0GPa)HSG-7000 (E = 4.3GPa)<strong>Low</strong>-kCuNo delamination !<strong>Low</strong>-k
Change language