TIC206 SERIES SILICON TRIACS

TIC206 SERIESSILICON TRIACSCopyright © 2001, Power Innovations Limited, UKDECEMBER 1971 - REVISED FEBRUARY 2001●Sensitive Gate Triacs● 4 A RMS● Glass Passivated Wafer● 400 V to 700 V Off-State Voltage● Max I GT of 5 mA (Quadrants 1 - 3)MT1MT2GTO-220 PACKAGE(TOP VIEW)123Pin 2 is in electrical contact with the mounting base.MDC2ACAabsolute maximum ratings over operating case temperature (unless otherwise noted)Repetitive peak off-state voltage (see Note 1)RATING SYMBOL VALUE UNITTIC206DTIC206MTIC206SV DRM400600Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) I T(RMS) 4 APeak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) I TSM 25 APeak gate current I GM ±0.2 APeak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs) P GM 1.3 WAverage gate power dissipation at (or below) 85°C case temperature (see Note 4) P G(AV) 0.3 WOperating case temperature range T C -40 to +110 °CStorage temperature range T stg -40 to +125 °CLead temperature 1.6 mm from case for 10 seconds T L 230 °CNOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature atthe rate of 160 mA/°C.3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surgemay be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.4. This value applies for a maximum averaging time of 20 ms.700Velectrical characteristics at 25°C case temperature (unless otherwise noted)PARAMETER TEST CONDITIONS MIN TYP MAX UNITI DRMI GTV GTRepetitive peakoff-state currentGate triggercurrentGate triggervoltageV D = rated V DRM I G = 0 T C = 110°C ±1 mAV supply = +12 V† R L = 10 Ωt p(g) > 20 µs0.9 5V supply = +12 V† R L = 10 Ωt p(g) > 20 µs-2.2 -5V supply = -12 V† R L = 10 Ωt p(g) > 20 µs-1.8 -5mAV supply = -12 V† R L = 10 Ωt p(g) > 20 µs2.4 10V supply = +12 V† R L = 10 Ωt p(g) > 20 µs0.7 2V supply = +12 V† R L = 10 Ωt p(g) > 20 µs-0.7 -2V supply = -12 V† R L = 10 Ωt p(g) > 20 µs-0.7 -2VV supply = -12 V† R L = 10 Ωt p(g) > 20 µs0.7 2† All voltages are with respect to Main Terminal 1.PRODUCTINFORMATIONInformation is current as of publication date. Products conform to specifications in accordancewith the terms of Power Innovations standard warranty. Production processing does notnecessarily include testing of all parameters.1

TIC206 SERIESSILICON TRIACSDECEMBER 1971 - REVISED FEBRUARY 2001electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)V T On-state voltage I T = ±4.2 A I G = 50 mA (see Note 5) ±1.4 ±2.2 VI HI Ldv/dtdv/dt (c)PARAMETER TEST CONDITIONS MIN TYP MAX UNITHolding currentLatching currentCritical rate of rise ofoff-state voltageCritical rise ofcommutation voltageV supply = +12 V†V supply = -12 V†V supply = +12 V†V supply = -12 V†I G = 0I G = 0(see Note 6)Init’ I TM = 100 mAInit’ I TM = -100 mAV DRM = Rated V DRM I G = 0 T C = 110°C ±20 V/µsV DRM = Rated V DRM I TRM = ±4.2 A T C = 85°C ±1 ±3 V/µs† All voltages are with respect to Main Terminal 1.NOTES: 5. This parameter must be measured using pulse techniques, t p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate fromthe current carrying contacts are located within 3.2 mm from the device body.6. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:R G = 100 Ω, t p(g) = 20 µs, t r = ≤ 15 ns, f = 1 kHz.thermal characteristicsPARAMETER MIN TYP MAX UNITR θJC Junction to case thermal resistance 7.8 °C/WR θJA Junction to free air thermal resistance 62.5 °C/W1.5-1.315-1530-30mAmATYPICAL CHARACTERISTICSGATE TRIGGER CURRENTvsGATE TRIGGER VOLTAGEvsI GT- Gate Trigger Current - mA100101V supplyI GTM+ ++ -- -- +TEMPERATUREV AA= ± 12 VR L= 10 Wt w(g)= 20 µsTC05AAV GT- Gate Trigger Voltage - V101V supplyI GTM+ ++ -- -- +TEMPERATUREV AA= ± 12 VR L= 10 Wt w(g)= 20 µsTC05AB0·10·1-60 -40 -20 0 20 40 60 80 100 120-60 -40 -20 0 20 40 60 80 100 120T C- Case Temperature - °CT C- Case Temperature - °CFigure 1. Figure 2.PRODUCTINFORMATION2

TIC206 SERIESSILICON TRIACSDECEMBER 1971 - REVISED FEBRUARY 2001TYPICAL CHARACTERISTICSHOLDING CURRENTvsLATCHING CURRENTvsI H- Holding Current - mA101V supply+-CASE TEMPERATUREV AA= ± 12 VTC05ADI G= 0Initiating I TM= 100 mAI L- Latching Current - mA100101V supplyI GTM+ ++ -- -- +CASE TEMPERATUREV AA= ± 12 VTC05AE0·10-60 -40 -20 0 20 40 60 80 100 120-60 -40 -20 0 20 40 60 80 100 120T C- Case Temperature - °CT C- Case Temperature - °CFigure 3. Figure 4.PRODUCTINFORMATION3

TIC206 SERIESSILICON TRIACSDECEMBER 1971 - REVISED FEBRUARY 2001TO-2203-pin plastic flange-mount packageMECHANICAL DATAThis single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plasticcompound. The compound will withstand soldering temperature with no deformation, and circuit performancecharacteristics will remain stable when operated in high humidity conditions. Leads require no additionalcleaning or processing when used in soldered assembly.TO-2204,704,203,9610,41,32ø3,7110,02,951,232,546,66,015,3214,5518,0 TYP.6,15,60,970,661 2 31,471,0714,112,72,742,340,640,415,284,682,902,40ALL LINEAR DIMENSIONS IN MILLIMETERSNOTEA: The centre pin is in electrical contact with the mounting tab.PRODUCTINFORMATION4

TIC206 SERIESSILICON TRIACSDECEMBER 1971 - REVISED FEBRUARY 2001IMPORTANT NOTICEPower Innovations Limited (PI) reserves the right to make changes to its products or to discontinue anysemiconductor product or service without notice, and advises its customers to verify, before placing orders, that theinformation being relied on is current.PI warrants performance of its semiconductor products to the specifications applicable at the time of sale inaccordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PIdeems necessary to support this warranty. Specific testing of all parameters of each device is not necessarilyperformed, except as mandated by government requirements.PI accepts no liability for applications assistance, customer product design, software performance, or infringementof patents or services described herein. Nor is any license, either express or implied, granted under any patentright, copyright, design right, or other intellectual property right of PI covering or relating to any combination,machine, or process in which such semiconductor products or services might be or are used.PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BESUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.Copyright © 2001, Power Innovations LimitedPRODUCTINFORMATION5