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Intel® 945G/945GZ/945GC/ 945P/945PL Express Chipset Family ...

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Signal Description<br />

2.2 DDR2 DRAM Channel A Interface<br />

Signal Name Type Description<br />

SCLK_A[5:0] O<br />

SSTL-1.8<br />

SCLK_A[5:0]# O<br />

SSTL-1.8<br />

SCS_A[3:0]# O<br />

SSTL-1.8<br />

SMA_A[13:0] O<br />

SSTL-1.8<br />

SBS_A[2:0] O<br />

SSTL-1.8<br />

SRAS_A# O<br />

SSTL-1.8<br />

SCAS_A# O<br />

SSTL-1.8<br />

SWE_A# O<br />

SSTL-1.8<br />

SDQ_A[63:0] I/O<br />

SSTL-1.8<br />

2x<br />

SDM_A[7:0] O<br />

SSTL-1.8<br />

2X<br />

SDQS_A[7:0] I/O<br />

SSTL-1.8<br />

2x<br />

SDQS_A[7:0]# I/O<br />

SSTL-1.8<br />

2x<br />

SCKE_A[3:0] O<br />

SSTL-1.8<br />

SODT_A[3:0] O<br />

SSTL-1.8<br />

SDRAM Differential Clock: (3 per DIMM). SCLK_Ax and its complement<br />

SCLK_Ax# signal make a differential clock pair output. The crossing of the<br />

positive edge of SCLK_Ax and the negative edge of its complement<br />

SCLK_Ax# are used to sample the command and control signals on the<br />

SDRAM.<br />

SDRAM Complementary Differential Clock: (3 per DIMM). These are the<br />

complementary Differential DDR2 Clock signals.<br />

Chip Select: (1 per Rank). These signals select particular SDRAM<br />

components during the active state. There is one chip select for each<br />

SDRAM rank.<br />

Memory Address: These signals are used to provide the multiplexed row<br />

and column address to the SDRAM.<br />

Bank Select: These signals define which banks are selected within each<br />

SDRAM rank.<br />

DDR2: 1-Gb technology is 8 banks.<br />

Row Address Strobe: This signal is used with SCAS_A# and SWE_A#<br />

(along with SCS_A#) to define the SDRAM commands.<br />

Column Address Strobe: This signal is used with SRAS_A# and SWE_A#<br />

(along with SCS_A#) to define the SDRAM commands.<br />

Write Enable: This signal is used with SCAS_A# and SRAS_A# (along with<br />

SCS_A#) to define the SDRAM commands.<br />

Data Lines: The SDQ_A[63:0] signals interface to the SDRAM data bus.<br />

Data Mask: When activated during writes, the corresponding data groups in<br />

the SDRAM are masked. There is one SDM_Ax bit for every data byte lane.<br />

Data Strobes: For DDR2, SDQS_Ax and its complement SDQS_Ax# signal<br />

make up a differential strobe pair. The data is captured at the crossing point<br />

of SDQS_Ax and its complement SDQS_Ax# during read and write<br />

transactions.<br />

Data Strobe Complements: These are the complementary DDR2 strobe<br />

signals.<br />

Clock Enable: (1 per Rank). SCKE_Ax is used to initialize the SDRAMs<br />

during power-up, to power-down SDRAM ranks, and to place all SDRAM<br />

ranks into and out of self-refresh during Suspend-to-RAM.<br />

On Die Termination: Active On-die Termination Control signals for DDR2<br />

devices.<br />

36 Intel ® 82<strong>945G</strong>/82<strong>945G</strong>Z/82<strong>945G</strong>C GMCH and 82<strong>945P</strong>/82<strong>945P</strong>L MCH Datasheet

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