Intel® 945G/945GZ/945GC/ 945P/945PL Express Chipset Family ...

Intel® 945G/945GZ/945GC/ 945P/945PL Express Chipset Family ... Intel® 945G/945GZ/945GC/ 945P/945PL Express Chipset Family ...

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Functional Description 10.2.1 System Memory Configuration Registers Overview The configuration registers located in the PCI configuration space of the (G)MCH control the system memory operation. Following is a brief description of configuration registers. � DRAM Rank Boundary (CxDRBy): The x represents a channel, either A or B. The y represents a rank, 0 through 3. DRB registers define the upper addresses for a rank of DRAM devices in a channel. When the (G)MCH is configured in asymmetric mode, each register represents a single rank. When the (G)MCH is configured in a dual interleaved mode, each register represents a pair of corresponding ranks in opposing channels. There are 4 DRB registers for each channel. � DRAM Rank Architecture (CxDRAy): The x represents a channel, either A or B. The y represents a rank, 0 through 3. DRA registers specify the architecture features of each rank of devices in a channel. The only architecture feature specified is page size. When the (G)MCH is configured in asymmetric mode, each DRA represents a single rank in a single channel. When (G)MCH is configured in a dual-channel interleaved mode, each DRA represents a pair of corresponding ranks in opposing channels. There are 4 DRA registers per channel. Each requires only 3 bits, so there are two DRAs packed into a byte. � Clock Configuration (CLKCFG): CLKCFG specifies DRAM frequency. The same clock frequency will be driven to all DIMMs. � DRAM Timing (CxDRT1): The x represents a channel, A or B represented by 0 and 1 respectively. The DRT Register defines the timing parameters for all devices in a channel. BIOS programs this register with “least common denominator” values after reading the SPD registers of each DIMM in the channel. � DRAM Control (CxDRC0): The x represents a channel, A or B represented by 0 and 1 respectively. DRAM refresh mode, rate, and other controls are selected here. 10.2.2 DRAM Technologies and Organization "Single sided" below is a logical term referring to the number of chip selects attached to the DIMM. A real DIMM may put the components on both sides of the substrate, but be logically indistinguishable from single-sided DIMM if all components on the DIMM are attached to the same chip select signal. � x8 means that each component has 8 data lines. � x16 means that each component has 16 data lines All standard 256-Mb, 512-Mb, and 1-Gb technologies and addressing are supported for x16 and x8 devices. For DDR2: 400 MHz (PC2 3200) Non-ECC Version A = Single sided x8 Version B = Double sided x8 Version C = Single sided x16 533 MHz (PC 4300) Non-ECC Version A = Single sided x8 Version B = Double sided x8 Version C = Single sided x16 226 Intel ® 82945G/82945GZ/82945GC GMCH and 82945P/82945PL MCH Datasheet

667 MHz (PC 5300) (82945G/82945GC/82945P (G)MCH Only) Non-ECC Version C = Single sided x16 Version D = Single sided x8 Version E = Double sided x8 Functional Description There is No support for DIMMs with different technologies or capacities on opposite sides of the same DIMM. If one side of a DIMM is populated, the other side is either identical or empty. Supported components include: For DDR2 at 533 MHz (PC4300) and 667 MHz (PC5300) (667 MHz on 82945G/82945GC/82945P (G)MCH Only) 256-Mb technology 32-M cells x8 data bits/cell 1-K columns 4 banks 8-K rows Each component has a 1-KB page. One DIMM has 8 components resulting in an 8-KB page. The capacity of one rank is 256 MB. 16-M cells x16 data bits/cell 512 columns 4 banks 8-K rows Each component has a 1-KB page. One DIMM has 4 components resulting in a 4-KB page. The capacity of one rank is 128 MB. 512-Mb technology 64-M cells x8 data bits/cell 1K columns 4 banks 16K rows Each component has a 1-KB page. One DIMM has 8 components resulting in an 8-KB page. The capacity of one rank is 512 MB. 32-M cells x16 data bits/cell 1-K columns 4 banks 8-K rows Each component has a 2-KB page. One DIMM has 4 components resulting in an 8-KB page. The capacity of one rank is 256 MB. Intel ® 82945G/82945G/82945GC GMCH and 82945P/82945PL MCH Datasheet 227

Functional Description<br />

10.2.1 System Memory Configuration Registers Overview<br />

The configuration registers located in the PCI configuration space of the (G)MCH control the<br />

system memory operation. Following is a brief description of configuration registers.<br />

� DRAM Rank Boundary (CxDRBy): The x represents a channel, either A or B. The y<br />

represents a rank, 0 through 3. DRB registers define the upper addresses for a rank of DRAM<br />

devices in a channel. When the (G)MCH is configured in asymmetric mode, each register<br />

represents a single rank. When the (G)MCH is configured in a dual interleaved mode, each<br />

register represents a pair of corresponding ranks in opposing channels. There are 4 DRB<br />

registers for each channel.<br />

� DRAM Rank Architecture (CxDRAy): The x represents a channel, either A or B. The y<br />

represents a rank, 0 through 3. DRA registers specify the architecture features of each rank of<br />

devices in a channel. The only architecture feature specified is page size. When the (G)MCH<br />

is configured in asymmetric mode, each DRA represents a single rank in a single channel.<br />

When (G)MCH is configured in a dual-channel interleaved mode, each DRA represents a<br />

pair of corresponding ranks in opposing channels. There are 4 DRA registers per channel.<br />

Each requires only 3 bits, so there are two DRAs packed into a byte.<br />

� Clock Configuration (CLKCFG): CLKCFG specifies DRAM frequency. The same clock<br />

frequency will be driven to all DIMMs.<br />

� DRAM Timing (CxDRT1): The x represents a channel, A or B represented by 0 and 1<br />

respectively. The DRT Register defines the timing parameters for all devices in a channel.<br />

BIOS programs this register with “least common denominator” values after reading the SPD<br />

registers of each DIMM in the channel.<br />

� DRAM Control (CxDRC0): The x represents a channel, A or B represented by 0 and 1<br />

respectively. DRAM refresh mode, rate, and other controls are selected here.<br />

10.2.2 DRAM Technologies and Organization<br />

"Single sided" below is a logical term referring to the number of chip selects attached to the<br />

DIMM. A real DIMM may put the components on both sides of the substrate, but be logically<br />

indistinguishable from single-sided DIMM if all components on the DIMM are attached to the<br />

same chip select signal.<br />

� x8 means that each component has 8 data lines.<br />

� x16 means that each component has 16 data lines<br />

All standard 256-Mb, 512-Mb, and 1-Gb technologies and addressing are supported for x16 and<br />

x8 devices.<br />

For DDR2:<br />

400 MHz (PC2 3200)<br />

Non-ECC<br />

Version A = Single sided x8<br />

Version B = Double sided x8<br />

Version C = Single sided x16<br />

533 MHz (PC 4300)<br />

Non-ECC<br />

Version A = Single sided x8<br />

Version B = Double sided x8<br />

Version C = Single sided x16<br />

226 Intel ® 82<strong>945G</strong>/82<strong>945G</strong>Z/82<strong>945G</strong>C GMCH and 82<strong>945P</strong>/82<strong>945P</strong>L MCH Datasheet

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