Intel® 945G/945GZ/945GC/ 945P/945PL Express Chipset Family ...
Intel® 945G/945GZ/945GC/ 945P/945PL Express Chipset Family ... Intel® 945G/945GZ/945GC/ 945P/945PL Express Chipset Family ...
Functional Description 10.2.1 System Memory Configuration Registers Overview The configuration registers located in the PCI configuration space of the (G)MCH control the system memory operation. Following is a brief description of configuration registers. � DRAM Rank Boundary (CxDRBy): The x represents a channel, either A or B. The y represents a rank, 0 through 3. DRB registers define the upper addresses for a rank of DRAM devices in a channel. When the (G)MCH is configured in asymmetric mode, each register represents a single rank. When the (G)MCH is configured in a dual interleaved mode, each register represents a pair of corresponding ranks in opposing channels. There are 4 DRB registers for each channel. � DRAM Rank Architecture (CxDRAy): The x represents a channel, either A or B. The y represents a rank, 0 through 3. DRA registers specify the architecture features of each rank of devices in a channel. The only architecture feature specified is page size. When the (G)MCH is configured in asymmetric mode, each DRA represents a single rank in a single channel. When (G)MCH is configured in a dual-channel interleaved mode, each DRA represents a pair of corresponding ranks in opposing channels. There are 4 DRA registers per channel. Each requires only 3 bits, so there are two DRAs packed into a byte. � Clock Configuration (CLKCFG): CLKCFG specifies DRAM frequency. The same clock frequency will be driven to all DIMMs. � DRAM Timing (CxDRT1): The x represents a channel, A or B represented by 0 and 1 respectively. The DRT Register defines the timing parameters for all devices in a channel. BIOS programs this register with “least common denominator” values after reading the SPD registers of each DIMM in the channel. � DRAM Control (CxDRC0): The x represents a channel, A or B represented by 0 and 1 respectively. DRAM refresh mode, rate, and other controls are selected here. 10.2.2 DRAM Technologies and Organization "Single sided" below is a logical term referring to the number of chip selects attached to the DIMM. A real DIMM may put the components on both sides of the substrate, but be logically indistinguishable from single-sided DIMM if all components on the DIMM are attached to the same chip select signal. � x8 means that each component has 8 data lines. � x16 means that each component has 16 data lines All standard 256-Mb, 512-Mb, and 1-Gb technologies and addressing are supported for x16 and x8 devices. For DDR2: 400 MHz (PC2 3200) Non-ECC Version A = Single sided x8 Version B = Double sided x8 Version C = Single sided x16 533 MHz (PC 4300) Non-ECC Version A = Single sided x8 Version B = Double sided x8 Version C = Single sided x16 226 Intel ® 82945G/82945GZ/82945GC GMCH and 82945P/82945PL MCH Datasheet
667 MHz (PC 5300) (82945G/82945GC/82945P (G)MCH Only) Non-ECC Version C = Single sided x16 Version D = Single sided x8 Version E = Double sided x8 Functional Description There is No support for DIMMs with different technologies or capacities on opposite sides of the same DIMM. If one side of a DIMM is populated, the other side is either identical or empty. Supported components include: For DDR2 at 533 MHz (PC4300) and 667 MHz (PC5300) (667 MHz on 82945G/82945GC/82945P (G)MCH Only) 256-Mb technology 32-M cells x8 data bits/cell 1-K columns 4 banks 8-K rows Each component has a 1-KB page. One DIMM has 8 components resulting in an 8-KB page. The capacity of one rank is 256 MB. 16-M cells x16 data bits/cell 512 columns 4 banks 8-K rows Each component has a 1-KB page. One DIMM has 4 components resulting in a 4-KB page. The capacity of one rank is 128 MB. 512-Mb technology 64-M cells x8 data bits/cell 1K columns 4 banks 16K rows Each component has a 1-KB page. One DIMM has 8 components resulting in an 8-KB page. The capacity of one rank is 512 MB. 32-M cells x16 data bits/cell 1-K columns 4 banks 8-K rows Each component has a 2-KB page. One DIMM has 4 components resulting in an 8-KB page. The capacity of one rank is 256 MB. Intel ® 82945G/82945G/82945GC GMCH and 82945P/82945PL MCH Datasheet 227
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Functional Description<br />
10.2.1 System Memory Configuration Registers Overview<br />
The configuration registers located in the PCI configuration space of the (G)MCH control the<br />
system memory operation. Following is a brief description of configuration registers.<br />
� DRAM Rank Boundary (CxDRBy): The x represents a channel, either A or B. The y<br />
represents a rank, 0 through 3. DRB registers define the upper addresses for a rank of DRAM<br />
devices in a channel. When the (G)MCH is configured in asymmetric mode, each register<br />
represents a single rank. When the (G)MCH is configured in a dual interleaved mode, each<br />
register represents a pair of corresponding ranks in opposing channels. There are 4 DRB<br />
registers for each channel.<br />
� DRAM Rank Architecture (CxDRAy): The x represents a channel, either A or B. The y<br />
represents a rank, 0 through 3. DRA registers specify the architecture features of each rank of<br />
devices in a channel. The only architecture feature specified is page size. When the (G)MCH<br />
is configured in asymmetric mode, each DRA represents a single rank in a single channel.<br />
When (G)MCH is configured in a dual-channel interleaved mode, each DRA represents a<br />
pair of corresponding ranks in opposing channels. There are 4 DRA registers per channel.<br />
Each requires only 3 bits, so there are two DRAs packed into a byte.<br />
� Clock Configuration (CLKCFG): CLKCFG specifies DRAM frequency. The same clock<br />
frequency will be driven to all DIMMs.<br />
� DRAM Timing (CxDRT1): The x represents a channel, A or B represented by 0 and 1<br />
respectively. The DRT Register defines the timing parameters for all devices in a channel.<br />
BIOS programs this register with “least common denominator” values after reading the SPD<br />
registers of each DIMM in the channel.<br />
� DRAM Control (CxDRC0): The x represents a channel, A or B represented by 0 and 1<br />
respectively. DRAM refresh mode, rate, and other controls are selected here.<br />
10.2.2 DRAM Technologies and Organization<br />
"Single sided" below is a logical term referring to the number of chip selects attached to the<br />
DIMM. A real DIMM may put the components on both sides of the substrate, but be logically<br />
indistinguishable from single-sided DIMM if all components on the DIMM are attached to the<br />
same chip select signal.<br />
� x8 means that each component has 8 data lines.<br />
� x16 means that each component has 16 data lines<br />
All standard 256-Mb, 512-Mb, and 1-Gb technologies and addressing are supported for x16 and<br />
x8 devices.<br />
For DDR2:<br />
400 MHz (PC2 3200)<br />
Non-ECC<br />
Version A = Single sided x8<br />
Version B = Double sided x8<br />
Version C = Single sided x16<br />
533 MHz (PC 4300)<br />
Non-ECC<br />
Version A = Single sided x8<br />
Version B = Double sided x8<br />
Version C = Single sided x16<br />
226 Intel ® 82<strong>945G</strong>/82<strong>945G</strong>Z/82<strong>945G</strong>C GMCH and 82<strong>945P</strong>/82<strong>945P</strong>L MCH Datasheet