w65c816s Microprocessor Data Sheet.pdf

The Western Design Center, Inc.5.2 DC Characteristics TA = -40°C to +85°CW65C816S Data SheetTable 5-2 DC CharacteristicsSymbol5.0 +/ - 5% 3.3 +/ - 10% 3.0 +/ - 5% 2.5 +/ - 5% 1.8 +/ - 5% UnitsMin Max Min Max Min Max Min Max Min MaxVDO 4.25 5.25 3.0 3.6 2.85 3.15 2.375 2.625 1.71 1.89 VInput High VoltageVihABORTB, BE, Data, IRQB, RDY, VDDx0.8 VDD+0.3 VDDx0.8 VDD+0.3 VDDx0.8 VDD+0.3 VDDx0.8 VDD+0.3 VDDx0.8VDD+0.3NMIB, PHI2, RESBVVilInput Low VoltageABORTB, BE, Data, IRQB, RDY, VSS-0.3 VDDx0.2 VSS-0.3 VDDx0.2 VSS-0.3 VDDx0.2 VSS-0.3 VDDx0.2 VSS-0.3 VDDx0.2 VNMIB, PHI2, RESBIpupRDY Input Pullup-Current(VIN=VDDx0.8)5 20 5 20 5 20 2 10 2 10 µAIin Input Leakage Current (Vin=0.4 to 2.4)PHI2, Address, Data, RWB, (Off state, -0.2 0.2 -0.2 0.2 -0.2 0.2 -0.2 0.2 -0.2 0.2 µABE=0), All other inputsOutput High Voltage (Vol=VDD-0.4V)Ioh Address, Data, E, MLB, MX,700 - 300 - 300 - 200 - 100 - µARWB, VDA, VPA, VPBIolOutput Low Voltage (Vol=VSS+0.4V)Address, Data, E, MLB, MX, RWB, 1.6 - 1.6 - 1.6 - 1.0 - .5 - mAVDA, VPA, VPBIddSupply Current (no load)- 2.01.51.51.00.75 mA/----Supply Current (core)- 1.00.60.50.40.30 MHzStandby Current (No Load, Data Bus =VSS or VDD)IsbyABORTB, BE, IRQB, NMIB, RESB,- 1 - 1 - 1 - 1µAPHI2=VDDCapacitance (Vin=0V, TA=25°C, f=1MHz)ABORTB, BE, IRQB, NMIB, PHI2,Cin RBW, RESB, RDY,pF- 5 - 5 - 5 - 5 - 5Cts Address, Data, R/W- (Off state)pF* Not inspected during production test;verified on a sample basis.IDD (mA)1.21.12.01.81.61.41.21.00.80.60.40.20.001 MHz Operation@85°CTypical 0.6u processed device· (With tester loading)• (CORE power only)·•·•1 2 3 4 5 6·•VDD (VOLTS)Table 5-3 IDD vs. VDD·•VDD (VOLTS)6.05.55.04.54.0Typical 0.6u processed device @85°C3.53.0··2.52.0 ·1.51.00.00 2 4 6 8 10 12 14 16 18 20F Max (MHz)Table 5- 4 F Max vs. VDD·The Western Design Center W65C816S 29