Understanding Smart Sensors - Nomads.usp

Micromachining 35250 nm and with arbitrary structure orientations on a silicon wafer have beenproduced using the single-crystal reactive etching and metallization(SCREAM) process. As shown in Figure 2.11 [23], a thick-film deposition isnot required. A silicon cantilever beam is formed with aluminum electrodes onboth sides of the beam using silicon dioxide for insulation and for the top andPhotoresistThermal SiO 2Silicon substrateAluminumPhotoresistThermal SiO 2AluminumSiliconFigure 2.11 RIE in the SCREAM process. (After: [23].)