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Understanding Smart Sensors - Nomads.usp

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Table 2.3Comparison of Typical Wafer Bonding Process Conditions [8]ProcessTemperature(°C)Pressure(Bar)Voltage(V)SurfaceRoughness (nm) Precise Gaps Hermetic SealSilicon-silicon 400–500 1 N/A N/A No Yes 10(glass frit)Anodic 300–500 N/A 100–1,000 20 Yes Yes 10 –5Silicon fusion 1,000 N/A N/A 0.5 Yes Yes 10 –3Vacuum LevelDuring Bonding(Torr)Micromachining 27

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