RD00HHS1 - SDR-Kits
RD00HHS1 - SDR-Kits
RD00HHS1 - SDR-Kits
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ELECTROSTATIC SENSITIVE DEVICEOBSERVE HANDLING PRECAUTIONSMITSUBISHI RF POWER MOS FET<strong>RD00HHS1</strong>RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3WTYPICAL CHARACTERISTICSCHANNEL DISSIPATIONPch(W)43210DRAIN DISSIPATION VS.AMBIENT TEMPERATUREOn PCB(*1)*1:The material of the PCBGlass epoxy (t=0.6 mm)On PCB(*1) with Heat-sink0 40 80 120 160 200AMBIENT TEMPERATURE Ta(°C)Ids(A)0.60.50.40.30.20.10.0Vgs-Ids CHARACTERISTICSTa=+25°CVds=10V0 1 2 3 4 5Vgs(V)1.4Vds-Ids CHARACTERISTICS20Vds VS. Ciss CHARACTERISTICS1.21.0Ta=+25°CVgs=10VVgs=9VVgs=8VVgs=7V15Ta=+25°Cf=1MHzIds(A)0.80.6Vgs=6VVgs=5VCiss(pF)100.40.20.00 2 4 6 8 10Vds(V)Vgs=4VVgs=3V500 5 10 15 20Vds(V)2015Vds VS. Coss CHARACTERISTICSTa=+25°Cf=1MHz43Vds VS. Crss CHARACTERISTICSTa=+25°Cf=1MHzCoss(pF)10Crss(pF)25100 5 10 15 20Vds(V)00 5 10 15 20Vds(V)<strong>RD00HHS1</strong> MITSUBISHI ELECTRIC 10 Jan 20062/6