RD00HHS1 - SDR-Kits

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ELECTROSTATIC SENSITIVE DEVICEOBSERVE HANDLING PRECAUTIONSMITSUBISHI RF POWER MOS FETRD00HHS1RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3WTYPICAL CHARACTERISTICSCHANNEL DISSIPATIONPch(W)43210DRAIN DISSIPATION VS.AMBIENT TEMPERATUREOn PCB(*1)*1:The material of the PCBGlass epoxy (t=0.6 mm)On PCB(*1) with Heat-sink0 40 80 120 160 200AMBIENT TEMPERATURE Ta(°C)Ids(A)0.60.50.40.30.20.10.0Vgs-Ids CHARACTERISTICSTa=+25°CVds=10V0 1 2 3 4 5Vgs(V)1.4Vds-Ids CHARACTERISTICS20Vds VS. Ciss CHARACTERISTICS1.21.0Ta=+25°CVgs=10VVgs=9VVgs=8VVgs=7V15Ta=+25°Cf=1MHzIds(A)0.80.6Vgs=6VVgs=5VCiss(pF)100.40.20.00 2 4 6 8 10Vds(V)Vgs=4VVgs=3V500 5 10 15 20Vds(V)2015Vds VS. Coss CHARACTERISTICSTa=+25°Cf=1MHz43Vds VS. Crss CHARACTERISTICSTa=+25°Cf=1MHzCoss(pF)10Crss(pF)25100 5 10 15 20Vds(V)00 5 10 15 20Vds(V)RD00HHS1 MITSUBISHI ELECTRIC 10 Jan 20062/6
ELECTROSTATIC SENSITIVE DEVICEOBSERVE HANDLING PRECAUTIONSMITSUBISHI RF POWER MOS FETRD00HHS1RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3WTYPICAL CHARACTERISTICSPin-Po CHARACTERISTICSPin-Po CHARACTERISTICS351001.2100Po(dBm) , Gp(dB) ,Idd(A)3025201510GpηPoTa=+25°Cf=30MHzVdd=12.5VIdq=50mA-20 -15 -10 -5 0 5 10Pin(dBm)806040200d(%)Pout(W) , Idd(A)1.00.80.60.40.20.0PoIddηdTa=25°Cf=30MHzVdd=12.5VIdq=50mA0 2 4 6 8 10Pin(mW)908070605040d(%)Po(W)1.21.00.80.60.4Vdd-Po CHARACTERISTICSTa=25°Cf=30MHzPin=4mWIcq=50mAZg=ZI=50 ohmIddPo1208040Idd(mA)Ids(A)0.60.50.40.30.2Vgs-Ids CHARACTORISTICS 2Vds=10VTc=-25~+75°C-25°C+25°C+75°C0.20.10.02 4 6 8 10 12 14Vdd(V)00.00 1 2 3 4 5Vgs(V)0.60.5Vgs-gm CHARACTORISTICSVds=10VTc=-25~+75°C0.4gm(S)0.30.20.1-25°C+75°C+25°C0.00 1 2 3 4 5Vgs(V)RD00HHS1 MITSUBISHI ELECTRIC 10 Jan 20063/6
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