BLF645 Broadband power LDMOS transistor - NXP Semiconductors

NXP SemiconductorsBLF645Broadband power LDMOS transistor8.2 Reliability10 5001aal366Years10 410 3(1)(2)(3)(4)(5)(6)10 2Fig 6.10(7)(8)(9)(10)(11)10 48 121620I DS(DC) (A)TTF (0.1 % failure fraction).(1) T j = 100 °C.(2) T j = 110 °C.(3) T j = 120 °C.(4) T j = 130 °C.(5) T j = 140 °C.(6) T j = 150 °C.(7) T j = 160 °C.(8) T j = 170 °C.(9) T j = 180 °C.(10) T j = 190 °C.(11) T j = 200 °C.BLF645 electromigration (I DS(DC) , total device)BLF645_1© NXP B.V. 2010. All rights reserved.Product data sheet Rev. 01 — 27 January 2010 7 of 13

NXP SemiconductorsBLF645Broadband power LDMOS transistor8.3 Test circuitC4V GGC15C13V DDC2R3T2R5C11L1IN50 ΩC1L3R1C6C8L4L6C9L8C10L10L12L14C17OUT50 ΩR2C7L5L7L9L11L13C3R4T1C12R6L2C5V GGC14C16V DD001aal367Fig 7.See Table 8 for a list of components.Class-AB common-source production test circuitC4+C15R3T2C13C1C2C6R1C8C9C10R5C11L1C17C3R2C7C12R6L2R4T1C14C5BLF645 INPUT REVZNXPBLF645 OUTPUT REVZNXP+C16001aal368Fig 8.See Table 8 for a list of components.Component layout for class-AB production test circuitBLF645_1© NXP B.V. 2010. All rights reserved.Product data sheet Rev. 01 — 27 January 2010 8 of 13

NXP SemiconductorsBLF645Broadband power LDMOS transistor9. Package outlineFlanged balanced LDMOST ceramic package; 2 mounting holes; 4 leadsSOT540ADAFD 1U 1BqCH 1MMcHU 2w 2 CE 11 2pE5w 1 M A M B MA34bw 3 MQe0 5 10 mmscaleDIMENSIONS (millimetre dimensions are derived from the original inch dimensions)UNITAbDD 1E E 1FHH 1pQmm5.775.008.518.26c e U 20.25q U 1w 1 w 2w 3inches0.2270.1970.3350.3250.150.100.0060.00422.0521.640.8680.85222.0521.6410.2110.2610.0610.3110.010.8680.852 0.402 0.404 0.4060.396 0.3941.781.520.0700.06015.7514.730.6200.58018.7218.470.7370.7273.383.120.1330.1232.722.460.1070.09727.941.10034.1633.911.3451.3359.919.650.3900.3800.25 0.510.010 0.0200.010OUTLINEVERSIONSOT540AREFERENCESIEC JEDEC EIAJEUROPEANPROJECTIONISSUE DATE99-08-2799-12-28Fig 9.Package outline SOT540ABLF645_1© NXP B.V. 2010. All rights reserved.Product data sheet Rev. 01 — 27 January 2010 10 of 13

NXP SemiconductorsBLF645Broadband power LDMOS transistor10. AbbreviationsTable 9.AcronymCWDCD-MOSESDHFLDMOSLDMOSTRFSMDVSWRAbbreviationsDescriptionContinuous WaveformDirect CurrentDiffusion Metal-Oxide SemiconductorElectroStatic DischargeHigh FrequencyLaterally Diffused Metal Oxide SemiconductorLaterally Diffused Metal-Oxide Semiconductor TransistorRadio FrequencySurface-Mount DeviceVoltage Standing-Wave Ratio11. Revision historyTable 10. Revision historyDocument ID Release date Data sheet status Change notice SupersedesBLF645_1 20100127 Product data sheet - -BLF645_1© NXP B.V. 2010. All rights reserved.Product data sheet Rev. 01 — 27 January 2010 11 of 13

NXP SemiconductorsBLF645Broadband power LDMOS transistor12. Legal information12.1 Data sheet statusDocument status [1][2] Product status [3] DefinitionObjective [short] data sheet Development This document contains data from the objective specification for product development.Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.Product [short] data sheet Production This document contains the product specification.[1] Please consult the most recently issued document before initiating or completing a design.[2] The term ‘short data sheet’ is explained in section “Definitions”.[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product statusinformation is available on the Internet at URL http://www.nxp.com.12.2 DefinitionsDraft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. NXP Semiconductors does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequences ofuse of such information.Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet is intendedfor quick reference only and should not be relied upon to contain detailed andfull information. For detailed and full information see the relevant full datasheet, which is available on request via the local NXP Semiconductors salesoffice. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.12.3 DisclaimersGeneral — Information in this document is believed to be accurate andreliable. However, NXP Semiconductors does not give any representations orwarranties, expressed or implied, as to the accuracy or completeness of suchinformation and shall have no liability for the consequences of use of suchinformation.Right to make changes — NXP Semiconductors reserves the right to makechanges to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.Suitability for use — NXP Semiconductors products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure ormalfunction of an NXP Semiconductors product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. NXP Semiconductors accepts no liability for inclusion and/or use ofNXP Semiconductors products in such equipment or applications andtherefore such inclusion and/or use is at the customer’s own risk.Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) may cause permanentdamage to the device. Limiting values are stress ratings only and operation ofthe device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limitingvalues for extended periods may affect device reliability.Terms and conditions of sale — NXP Semiconductors products are soldsubject to the general terms and conditions of commercial sale, as publishedat http://www.nxp.com/profile/terms, including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors. In case ofany inconsistency or conflict between information in this document and suchterms and conditions, the latter will prevail.No offer to sell or license — Nothing in this document may be interpreted orconstrued as an offer to sell products that is open for acceptance or the grant,conveyance or implication of any license under any copyrights, patents orother industrial or intellectual property rights.Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from national authorities.12.4 TrademarksNotice: All referenced brands, product names, service names and trademarksare the property of their respective owners.13. Contact informationFor more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: salesaddresses@nxp.comBLF645_1© NXP B.V. 2010. All rights reserved.Product data sheet Rev. 01 — 27 January 2010 12 of 13

NXP SemiconductorsBLF645Broadband power LDMOS transistor14. Contents1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1 General description . . . . . . . . . . . . . . . . . . . . . 11.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Pinning information. . . . . . . . . . . . . . . . . . . . . . 23 Ordering information. . . . . . . . . . . . . . . . . . . . . 24 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 25 Thermal characteristics . . . . . . . . . . . . . . . . . . 26 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 37 Application information. . . . . . . . . . . . . . . . . . . 37.1 Ruggedness in class-AB operation . . . . . . . . . 38 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 48.1 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 48.1.1 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48.1.2 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68.2 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 1010 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 1111 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 1112 Legal information. . . . . . . . . . . . . . . . . . . . . . . 1212.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1212.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1212.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 1212.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1213 Contact information. . . . . . . . . . . . . . . . . . . . . 1214 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.© NXP B.V. 2010. All rights reserved.For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: salesaddresses@nxp.comDate of release: 27 January 2010Document identifier: BLF645_1