Simulation of Circuit Reliability with RelXpert
Simulation of Circuit Reliability with RelXpert
Simulation of Circuit Reliability with RelXpert
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• For NMOS and PMOS, charges in the channelcurrent passing through the high-electric fieldregion near the drain can cause:– Impact Ionization• increased drain current• body current– Hot Carrier Injection (HCI) into Oxide• threshold voltage shifts and mobility degrades• oxide damage• gate current• Conventional SPICE models, e.g., BSIM4, includeimpact ionization current, but do not include HCIeffects.• <strong>RelXpert</strong> provides simulations <strong>of</strong> the HCI-inducedthreshold voltage shift and mobility degradation.<strong>Reliability</strong> Kinetics – Hot Carrier Injection(HCI)Sn+n+P-wellGI gDOxideDamageImpactIonizationI bodyn+September 22, 2005Slide 5
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