Simulation of Circuit Reliability with RelXpert

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Outline• MOSFET Reliability Kinetics:– Hot-Carrier Injection (HCI)– Negative Bias Temperature Instability (NBTI)– Gate Oxide Integrity (GOI)• Not included in RelXpert• RelXpert Modeling• RelXpert Simulation Flow• Circuit Example• SummarySeptember 22, 2005Slide 4
• For NMOS and PMOS, charges in the channelcurrent passing through the high-electric fieldregion near the drain can cause:– Impact Ionization• increased drain current• body current– Hot Carrier Injection (HCI) into Oxide• threshold voltage shifts and mobility degrades• oxide damage• gate current• Conventional SPICE models, e.g., BSIM4, includeimpact ionization current, but do not include HCIeffects.• RelXpert provides simulations of the HCI-inducedthreshold voltage shift and mobility degradation.Reliability Kinetics – Hot Carrier Injection(HCI)Sn+n+P-wellGI gDOxideDamageImpactIonizationI bodyn+September 22, 2005Slide 5
Page 1: Simulation of Circuit Reliabilitywi
Page 9 and 10: RelXpert Model Extraction Steps:1.
Page 11 and 12: HCI Lifetime Model Parameter Extrac
Page 13 and 14: Outline• MOSFET Reliability Kinet
Page 15 and 16: Outline• MOSFET Reliability Kinet
Page 17 and 18: Example RelXpert Application:Overdr
Page 19: Summary• Some circuit designs are

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