Simulation of Circuit Reliability with RelXpert
Simulation of Circuit Reliability with RelXpert
Simulation of Circuit Reliability with RelXpert
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
AgeMOS Parameter ExtractionThe <strong>RelXpert</strong> ‘AgeMOS’ model makes some key BSIM3/4 SPICE modelparameters a function <strong>of</strong> age. <strong>RelXpert</strong> will generate an aged SPICEmodel for each transistor based on its particular degradation from circuitoperation.-0.0035-0.0030-0.0025-0.0020Technology: 1233C027.0, 1.2V Core CMOSPMOS: L=0.13µm, W=10µmStress @ Vg=-1.6, Vd=0, T=125 o CStress time 1018 minutesfresh device measurement resultsfresh model simulationpost stress measurement resultspost stress agemos model simulationIds (A)-0.0015-0.0010-0.0005September 22, 20050.00000.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2Vds (V)Slide 12
Change language