Simulation of Circuit Reliability with RelXpert

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NBTI Model Parameter ExtractionDegradation due to NBTI:Aging due to NBTI:Idsat(t)=nAexp( − ∆H/ kT ) exp( −γV gs t1( ∆D) nnt = 0)*[1 − ( age) ]∆D =)age =Idsat(September 22, 2005Slide 10

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NBTI Model Parameter ExtractionDegradation due to NBTI:Aging due to NBTI:Idsat(t)=nAexp( − ∆H/ kT ) exp( −γV gs t1( ∆D) nnt = 0)*[1 − ( age) ]∆D =)age =Idsat(September 22, 2005Slide 10

HCI Lifetime Model Parameter ExtractionIb=ABii⎛ i c ⎞( Vds−Vdsat) Idexp − ⎟⎠⎜⎝VdsB l−Vdsatage =Idsat(t)= Idsat(tI ⎛ds IHW⎜⎝ Ibds⎞⎟⎠mt= 0)*[1 −n( age) ]September 22, 2005Slide 11

Page 1: Simulation of Circuit Reliabilitywi
Page 5: • For NMOS and PMOS, charges in t
Page 9: RelXpert Model Extraction Steps:1.
Page 13 and 14: Outline• MOSFET Reliability Kinet
Page 15 and 16: Outline• MOSFET Reliability Kinet
Page 17 and 18: Example RelXpert Application:Overdr
Page 19: Summary• Some circuit designs are

Simulation of Circuit Reliability with RelXpert

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