Proposal for the Undergraduate Research Award Title of the Activity ...

Chemical exfoliation can be used for large-scale preparation, however it has numerous defects.Recently, CVD is a kind of new way to prepare graphene, the process is simple and the quality ishigh, which can also be used in large-scale production, meanwhile, it can be easily transferred toother substrate. Therefore, CVD graphene is widely used in making nano-electronic devices andtransparent conducive films, and it gradually becomes the primary ways to prepare high qualitygrapheme films.Recently, researchers focused on large area preparation of graphene by CVD. Nickel andCopper substrates are most widely used. The grain size of Nickel is small and the number ofgraphene layers achieved was difficult to be controlled. Copper substrates were used to preparedsingle-layered graphene. Recently, 30 inches of graphene films was prepared on Copper substrateand the quality and conductivity were improved correspondingly. However, how to furtherimprove the quality, i.e. single crystal domain size, and the controllability of graphene thickness isstill a tough issue and research interest, which restricts the application of graphene.Research plan:In this program, we will investigate the growth mechanism of graphene on different metalsubstrates and the effect of growth condition on graphene structure by CVD method. We willprepare large area, high quality graphene with good controllability, which will pave the way forapplications.First, we will search the references on CVD graphene and be familiar with the CVD growthmethod. We will then build CVD furnace and prepare graphene on different substrates(Cu, Ni, andtheir allys). We will use substrate corrosion method to remove the metal substrate and transfergraphene to SiO2/Si substrates. Optical microscope will be used to observe the uniformity. Raman