BLF878 UHF power LDMOS transistor - NXP Semiconductors

NXP SemiconductorsBLF878UHF power LDMOS transistor7.2.2 DVB-T22001aai083600001aai084G p(dB)G p(2)(1)η D(%)IMD3(dBc)18η D(1)(2)40−20(1)(2)1420−40100400 500 600 700 800 900f (MHz)P L(AV) = 77 W; I Dq = 1.4 A; measured in a commonsource broadband test circuit as described in Section 8.(1) V DS = 40 V(2) V DS = 42 VFig 9. DVB-T power gain and drain efficiency asfunctions of frequency; typical valuesFig 10.−60400 500 600 700 800 900f (MHz)P L(AV) = 77 W; I Dq = 1.4 A; measured in a commonsource broadband test circuit as described in Section 8.(1) V DS = 40 V(2) V DS = 42 VDVB-T third order intermodulation distortionas a function of frequency; typical values10PAR(dB)9001aai085(2)(1)8765400 500 600 700 800 900f (MHz)P L(AV) = 77 W; I Dq = 1.4 A; measured in a common source broadband test circuit as described in Section 8.PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.(1) V DS = 40 V(2) V DS = 42 VFig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical valuesBLF878_2© NXP B.V. 2009. All rights reserved.Product data sheet Rev. 02 — 15 June 2009 9 of 18