BLF878 UHF power LDMOS transistor - NXP Semiconductors

NXP SemiconductorsBLF878UHF power LDMOS transistor7.2 Broadband RF figures7.2.1 2-Tone22001aai081800001aai082G p(dB)G p(2)(1)η D(%)IMD3(dBc)1860−20η D(1)(2)(1)(2)1440−401020400 500 600 700 800 900f (MHz)P L(AV) = 150 W; I Dq = 1.4 A; measured in a commonsource broadband test circuit as described in Section 8.(1) V DS = 40 V(2) V DS = 42 VFig 7. 2-Tone power gain and drain efficiency as afunction of frequency; typical valuesFig 8.−60400 500 600 700 800 900f (MHz)P L(AV) = 150 W; I Dq = 1.4 A; measured in a commonsource broadband test circuit as described in Section 8.(1) V DS = 40 V(2) V DS = 42 V2-Tone third order intermodulation distortionas a function of frequency; typical valuesBLF878_2© NXP B.V. 2009. All rights reserved.Product data sheet Rev. 02 — 15 June 2009 8 of 18