BLF878 UHF power LDMOS transistor - NXP Semiconductors
BLF878 UHF power LDMOS transistor - NXP Semiconductors
BLF878 UHF power LDMOS transistor - NXP Semiconductors
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<strong>NXP</strong> <strong>Semiconductors</strong><strong>BLF878</strong><strong>UHF</strong> <strong>power</strong> <strong>LDMOS</strong> <strong>transistor</strong>7.1.3 DVB-T23001aai07960−15001aai080G p(dB)(2)(1)η D(%)IMD3(dBc)21G p40−25η D(1)(2)1920−35(1)(2)1700 50 100 150 200 250P L(AV) (W)I Dq = 1.4 A; measured in a common source narrowband860 MHz test circuit.(1) V DS = 40 V(2) V DS = 42 VFig 5. DVB-T <strong>power</strong> gain and drain efficiency asfunctions of average load <strong>power</strong>; typicalvaluesFig 6.−450 50 100 150 200 250P L(AV) (W)I Dq = 1.4 A; measured in a common source narrowband860 MHz test circuit.(1) V DS = 40 V(2) V DS = 42 VDVB-T third order intermodulation distortionas a function of average load <strong>power</strong>; typicalvalues<strong>BLF878</strong>_2© <strong>NXP</strong> B.V. 2009. All rights reserved.Product data sheet Rev. 02 — 15 June 2009 7 of 18
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