BLF878 UHF power LDMOS transistor - NXP Semiconductors
BLF878 UHF power LDMOS transistor - NXP Semiconductors
BLF878 UHF power LDMOS transistor - NXP Semiconductors
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<strong>NXP</strong> <strong>Semiconductors</strong><strong>BLF878</strong><strong>UHF</strong> <strong>power</strong> <strong>LDMOS</strong> <strong>transistor</strong>7.1 Narrowband RF figures7.1.1 CW24G p(dB)2220(2)(1)G p(2)η D(1)001aai076806040η D(%)18201600 100 200 300 400P L (W)I Dq = 1.4 A; measured in a common source narrowband 860 MHz test circuit.(1) V DS = 40 V(2) V DS = 42 VFig 2. CW <strong>power</strong> gain and drain efficiency as a function of load <strong>power</strong>; typical values<strong>BLF878</strong>_2© <strong>NXP</strong> B.V. 2009. All rights reserved.Product data sheet Rev. 02 — 15 June 2009 5 of 18
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