BLF878 UHF power LDMOS transistor - NXP Semiconductors

NXP SemiconductorsBLF878UHF power LDMOS transistor4. Limiting values5. Thermal characteristicsTable 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max UnitV DS drain-source voltage - 89 VV GS gate-source voltage −0.5 +11 VT stg storage temperature −65 +150 °CT j junction temperature - 200 °CTable 5.6. CharacteristicsThermal characteristicsSymbol Parameter Conditions Typ UnitR th(j-c) thermal resistance from junction to case T case =80°C; [1] 0.23 K/WP L(AV) = 150 WR th(c-h) thermal resistance from case to heatsink[2]0.15 K/W[1] R th(j-c) is measured under RF conditions.[2] R th(c-h) is dependent on the applied thermal compound and clamping/mounting of the device.Table 6. CharacteristicsT j =25°C unless otherwise specified.Symbol Parameter Conditions Min Typ Max UnitV (BR)DSS drain-source breakdown voltage V GS =0V; I D = 2.25 mA [1] 89 - 105.5 VV GS(th) gate-source threshold voltage V DS = 10 V; I D = 225 mA [1] 1.4 1.9 2.4 VI DSS drain leakage current V GS =0V; V DS =42V - - 1.4 µAI DSX drain cut-off current V GS =V GSth + 3.75 V; 35 39 - AV DS =10VI GSS gate leakage current V GS =11V; V DS = 0 V - - 140 nAg fs forward transconductance V DS =10V; I D = 11.2 A[1]- 15.5 - SR DS(on) drain-source on-state resistance V GS =V GSth + 3.75 V; [1] - 110 - mΩI D = 7.6 AC iss input capacitance V GS = 0 V; V DS =40V; [2] - 190 - pFf=1MHzC oss output capacitance V GS = 0 V; V DS =40V; [2] - 60 - pFf=1MHzC rss reverse transfer capacitance V GS = 0 V; V DS =40V;f=1MHz[2] - 2 - pF[1] I D is the drain current.[2] Capacitance values without internal matching.BLF878_2© NXP B.V. 2009. All rights reserved.Product data sheet Rev. 02 — 15 June 2009 3 of 18