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BLF878 UHF power LDMOS transistor - NXP Semiconductors

BLF878 UHF power LDMOS transistor - NXP Semiconductors

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<strong>NXP</strong> <strong>Semiconductors</strong><strong>BLF878</strong><strong>UHF</strong> <strong>power</strong> <strong>LDMOS</strong> <strong>transistor</strong>10. AbbreviationsTable 10.AcronymCWCCDFDVBDVB-TESDIMD3<strong>LDMOS</strong><strong>LDMOS</strong>TOFDMPALPARPEPRFTTF<strong>UHF</strong>VSWRAbbreviationsDescriptionContinuous WaveComplementary Cumulative Distribution FunctionDigital Video BroadcastDigital Video Broadcast - TerrestrialElectroStatic DischargeThird order InterModulation DistortionLaterally Diffused Metal-Oxide SemiconductorLaterally Diffused Metal-Oxide Semiconductor TransistorOrthogonal Frequency Division MultiplexingPhase Alternating LinePeak-to-Average <strong>power</strong> RatioPeak Envelope PowerRadio FrequencyTime To FailureUltra High FrequencyVoltage Standing-Wave Ratio11. Revision historyTable 11. Revision historyDocument ID Release date Data sheet status Change notice Supersedes<strong>BLF878</strong>_2 20090615 Product data sheet - <strong>BLF878</strong>_1Modifications: • Table 4 on page 3: changed maximum value of V GS .• Table 6 on page 3: changed several values.• Table 7 on page 4: removed PAR specification.<strong>BLF878</strong>_1 20081215 Preliminary data sheet - -<strong>BLF878</strong>_2© <strong>NXP</strong> B.V. 2009. All rights reserved.Product data sheet Rev. 02 — 15 June 2009 16 of 18

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