BLF878 UHF power LDMOS transistor - NXP Semiconductors
BLF878 UHF power LDMOS transistor - NXP Semiconductors
BLF878 UHF power LDMOS transistor - NXP Semiconductors
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<strong>NXP</strong> <strong>Semiconductors</strong><strong>BLF878</strong><strong>UHF</strong> <strong>power</strong> <strong>LDMOS</strong> <strong>transistor</strong>Table 8. Typical push-pull impedance …continuedSimulated Z i and Z L device impedance; impedance info at V DS = 42 V and P L(PEP) = 300 W.f Z i Z LMHz Ω Ω925 5.103 + j4.467 3.706 − j0.871950 5.656 + j4.291 3.556 − j1.011975 6.205 + j3.963 3.415 − j1.1571000 6.696 + j3.463 3.281 − j1.3087.5 Reliability10 6Years10 5001aai08710 410 310 210(1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)10 4 812162024I DS(DC) (A)TTF (0.1 % failure fraction).The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.(1) T j = 100 °C(2) T j = 110 °C(3) T j = 120 °C(4) T j = 130 °C(5) T j = 140 °C(6) T j = 150 °C(7) T j = 160 °C(8) T j = 170 °C(9) T j = 180 °C(10) T j = 190 °C(11) T j = 200 °CFig 13. <strong>BLF878</strong> electromigration (I DS(DC) , total device)<strong>BLF878</strong>_2© <strong>NXP</strong> B.V. 2009. All rights reserved.Product data sheet Rev. 02 — 15 June 2009 11 of 18
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