High Power Impulse Magnetron Sputtering (HiPIMS)
High Power Impulse Magnetron Sputtering (HiPIMS) High Power Impulse Magnetron Sputtering (HiPIMS)
High Power Impulse Magnetron Sputtering (HiPIMS)Ionized Physical Vapor Deposition (IPVD)When the flux of ions is higher than the flux of neutrals orΓ i > Γ m the process is referred to as ionized physical vapordeposition (IPVD)The metal ions can be accelerated to the substrate bymeans of a low voltage dc biasThe metal ions arrive at the substrate at normal incidenceand at specific energyThe energy of the ions can be tailored to obtain impingingparticles with energies comparable to typical surface andmolecular binding energies
High Power Impulse Magnetron Sputtering (HiPIMS)Ionized Physical Vapor Deposition (IPVD)Ionizing the sputtered vapor has several advantages:improvement of the film quality, increased film density(Lim et al. (2000) JVSTA 18 524, Samuelsson et al. (2010) SCT 202 591)improved adhesion (Ehiasarian et al. (2007) JAP 101 054301)improved surface roughness (Sarakinos et al. (2007) JPD 40 2108)deposition on substrates with complex shapes and highaspect ratio (Alami et al. (2005) JVSTA 23 278)phase tailoring (Alami et al. (2007) TSF 515 3434)guiding of the deposition material to the desired areas ofthe substrate (Bohlmark et al. (2006) TSF 515 1928)hysteresis free reactive sputtering has been demonstratedin a HiPIMS discharge (Wallin and Helmersson (2008) TSF 516 6398)
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<strong>High</strong> <strong>Power</strong> <strong>Impulse</strong> <strong>Magnetron</strong> <strong>Sputtering</strong> (<strong>HiPIMS</strong>)Ionized Physical Vapor Deposition (IPVD)Ionizing the sputtered vapor has several advantages:improvement of the film quality, increased film density(Lim et al. (2000) JVSTA 18 524, Samuelsson et al. (2010) SCT 202 591)improved adhesion (Ehiasarian et al. (2007) JAP 101 054301)improved surface roughness (Sarakinos et al. (2007) JPD 40 2108)deposition on substrates with complex shapes and highaspect ratio (Alami et al. (2005) JVSTA 23 278)phase tailoring (Alami et al. (2007) TSF 515 3434)guiding of the deposition material to the desired areas ofthe substrate (Bohlmark et al. (2006) TSF 515 1928)hysteresis free reactive sputtering has been demonstratedin a <strong>HiPIMS</strong> discharge (Wallin and Helmersson (2008) TSF 516 6398)
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