High Power Impulse Magnetron Sputtering (HiPIMS)
High Power Impulse Magnetron Sputtering (HiPIMS) High Power Impulse Magnetron Sputtering (HiPIMS)
High Power Impulse Magnetron Sputtering (HiPIMS)SummaryThe design parameters for Ionized Physical VaporDeposition (IPVD) were discussedThe high power impulse magnetron sputtering discharge(HIPIMS) has been demonstrated as an Ionized PhysicalVapor Deposition (IPVD) toolPower supplyEssentially the same sputtering apparatus except for thepower supplyElectron densityRoughly 2 orders of magnitude higher in the substratevicinity than for a conventional dc magnetron sputteringdischarge
High Power Impulse Magnetron Sputtering (HiPIMS)SummaryIonization fractionIonization fraction is high, mainly due to the high electrondensityThe ions on the inert gas and the ions of the sputteredvapor are separated in timeDeposition rateDeposition rate is lower than in a conventional dcmagnetron sputtering discharge, maybe due to selfsputteringFilm qualityFilms deposited by HiPIMS are denser, more resistant tooxidation, smoother surfaces etc. – higher quality films areachieved at lower depostion temperature than by dcMS
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<strong>High</strong> <strong>Power</strong> <strong>Impulse</strong> <strong>Magnetron</strong> <strong>Sputtering</strong> (<strong>HiPIMS</strong>)SummaryIonization fractionIonization fraction is high, mainly due to the high electrondensityThe ions on the inert gas and the ions of the sputteredvapor are separated in timeDeposition rateDeposition rate is lower than in a conventional dcmagnetron sputtering discharge, maybe due to selfsputteringFilm qualityFilms deposited by <strong>HiPIMS</strong> are denser, more resistant tooxidation, smoother surfaces etc. – higher quality films areachieved at lower depostion temperature than by dcMS
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