High Power Impulse Magnetron Sputtering (HiPIMS)
High Power Impulse Magnetron Sputtering (HiPIMS)
High Power Impulse Magnetron Sputtering (HiPIMS)
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<strong>High</strong> <strong>Power</strong> <strong>Impulse</strong> <strong>Magnetron</strong> <strong>Sputtering</strong> (<strong>HiPIMS</strong>)<strong>HiPIMS</strong> - Voltage - Current - timeNote that since α < 1 and β t < 1 the condition Y ss > 1 isnecessary but not sufficient for achieving sustainedself-sputteringThe transient phase of self-sputtering runaway occurswhen Π ss > 1Self-sputtering runaway occurs at a well-defined thresholdpower, determined by the discharge voltage and is readilyobtained for high sputter yield materialsBut runaway can also occur at lower threshold voltagesthan for pure self-sputtering as well as for ransition metalsand target materials of low sputter yield due to what isreferred to as ’gas recycling’ runawayAnders (2011), SCT 205 S1, Anders et al. (2012) JPD 45 012003
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